一种低温度系数的高精度带隙基准源设计  

A Design of a High-precision Bandgap Reference Source with Low Temperature Coefficient

作　　者：曹胜 岳成平 高红霞 Cao Sheng;Yue Chengping;Gao Hongxia(Taiyuan University,Taiyuan Shanxi 030012,China)

机构地区：[1]太原学院,山西太原030012

出　　处：《山西电子技术》2023年第5期50-52,共3页Shanxi Electronic Technology

基　　金：2023年山西省高等学校一般性教学改革创新立项项目(J20231426);2023年山西省高等学校大学生创新创业训练计划项目(20231466,20231488);太原学院2023年大学生创新创业训练计划项目(TYX2023095)。

摘　　要：随着集成电路行业的发展,无线通信设备对电源稳定性的要求越来越高。在这种需求下,针对低温度系数高PSRR的基准源展开设计,在设计中采用折叠式共源共栅设计结构和零温度系数的补偿电路。基于中芯国际0.13μmCMOS工艺,使用cadence仿真软件进行优化。结果表明,在温度范围为-40℃~85℃之间,设计的高精度带隙基准源能够实现6.44 ppm/℃温度系数输出,电源抑制比为-90.25 dB,功耗为0.09 mW。With the development of integrated circuit industry,wireless communication equipment and other equipment have higher and higher requirements for power stability.In this case,the reference source with low temperature coefficient and high PSRR is designed.The folded common source and common gate design structure and zero temperature coefficient compensation circuit are used in the design.Based on SMIC 0.13μMCMOS process,it is optimized using cadence simulation software.The results show that in the temperature range of-40℃~85℃,the designed high-precision bandgap reference can achieve 6.44 ppm/℃temperature coefficient output,power supply rejection ratio is-90.25dB,and power consumption is 0.09mW.

关 键 词：低温度系数 高PSRR 高精度 带隙基准电压源 

分 类 号：TN432[电子电信—微电子学与固体电子学]