带隙基准源高阶曲率补偿方法研究  

Research on High-order Curvature Compensation Method of Bandgap Reference Source

作　　者：程亮[1] Cheng Liang(Shanxi Institute of Economic Management,Taiyuan Shanxi 030024,China)

机构地区：[1]山西经济管理干部学院,山西太原030024

出　　处：《山西电子技术》2023年第5期99-102,共4页Shanxi Electronic Technology

摘　　要：通过对带隙基准源电路原理进行研究与探索,分析并推导出双极型晶体管基极发射极电压的温度特性函数。在详细阐述传统一阶曲率补偿带隙基准源电路工作原理的基础上,为进一步降低基准电压的温度系数,提出了一种新颖的具有高阶曲率补偿功能的电路结构。理论上可以完全消除晶体管基极发射极电压V BE中的非线性温度特性。该结构采用了两个具有不同温度特性集电极电流的晶体管来生成两路负温度特性电流,这两路电流之差来消除基准电压中的温度非线性项。该方法优于文献中介绍的几种高阶曲率补偿方法。By researching and exploring the principle of bandgap reference circuit,the temperature characteristic function of base emitter voltage of bipolar transistor is analyzed and deduced.On the basis of detailed description of the working principle of the traditional first-order curvature compensated bandgap reference circuit,a novel circuit structure with high-order curvature compensated function is presented to further reduce the temperature factor of the reference voltage.Theoretically,the non-linear temperature characteristics in the transistor base emitter voltage can be completely eliminated.The structure uses two transistors to generate two negative temperature characteristic currents.The collector currents flowing through the two transistors have different temperature characteristics.The difference between the two currents is used to eliminate the temperature nonlinearity in the reference voltage.This method is superior to several higher-order curvature compensation methods described in the literature.

关 键 词：带隙基准源 温度系数 与绝对温度成正比 曲率补偿 

分 类 号：TN431[电子电信—微电子学与固体电子学]