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作 者:蔡明源 李超[1] 张丽聘 姚振东 张晶晶 范美强[1] CAI Mingyuan;LI Chao;ZHANG Liping;YAO Zhendong;ZHANG Jingjing;FAN Meiqiang(College of Materials and Chemistry,China Jiliang University,Hangzhou 310018,China)
机构地区:[1]中国计量大学材料与化学学院,浙江杭州310018
出 处:《中国计量大学学报》2023年第3期451-458,477,共9页Journal of China University of Metrology
基 金:浙江省自然科学基金项目(No.LQ16E010001);浙江省基本科研业务费资助项目(No.2022YW09)。
摘 要:目的:通过掺入二硫化钼(MoS_(2))和石墨(g),改善硅体积膨胀和导电性能差的问题。方法:采用机械球磨法制备了Si/MoS_(2)/g三元复合材料,通过X射线衍射、扫描电镜和电化学测试对材料进行了表征。结果:该复合材料具有良好的电化学性能,在0.1 A·g^(-1)的电流密度下,首次放电比容量为1681.9 mAh·g^(-1),循环100次后的可逆比容量为793.4 mAh·g^(-1);当电流密度阶梯式提升至1 A·g^(-1)时,可逆比容量仍高达662.3 mAh·g^(-1)。结论:微观结构和机理分析发现,片层状MoS_(2)和石墨分散在硅颗粒表面,有效缓解了硅在充放电过程中的体积膨胀,并且提升了材料的导电性。Aims:This paper aims to study the ways of releasing silicon volume expansion and improving its conductivity by doping with molybdenum disulfide(MoS_(2))and graphite(g).Methods:The Si/MoS_(2)/g ternary composites were prepared via the ball milling method;and the materials were characterized by X-ray diffraction,scanning electron microscopy and electrochemical tests.Results:The composite had good electrochemical performance,with discharge specific capacities of 1681.9 mAh·g^(-1)at the first cycle and 793.4 mAh·g^(-1)at the 100 th cycle with a current density of 0.1 A·g^(-1).The reversible specific capacity was 662.3 mAh·g^(-1)when the current density was risen to 1 A·g^(-1).Conclusions:Microstructural and mechanistic analysis showed that layered MoS_(2)and graphite dispersed on the surface of silicon particles,which released the volume expansion of silicon and enhanced the conductivity of the material during charging/discharging cycles.
分 类 号:TQ152[化学工程—电化学工业]
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