Intrinsic variations of ultrathin hafnium oxide-based ferroelectric tunnel junctions induced by ferroelectric-dielectric phase fluctuations  

作　　者：Pengying CHANG Mengqi FAN Gang DU Xiaoyan LIU Yiyang XIE 

机构地区：[1]Key Laboratory of Optoelectronics Technology,Beijing University of Technology,Beijing,100124,China [2]School of Integrated Circuits,Peking University,Beijing,100871,China

出　　处：《Science China(Information Sciences)》2023年第10期325-326,共2页中国科学（信息科学）（英文版）

基　　金：supported in part by National Natural Science Foundation of China(Grant No.61804003);National Key R&D Program of China(Grant No.2018YFA0209000);Beijing Nova Program(Grant No.Z201100006820096)。

摘　　要：Hafnium oxide(HfO_(2))-based ferroelectrics(FEs)are promising materials for low-power applications such as the Internet of Things and artificial neural network,due to their fully complementary-metal-oxide-semiconductor compatibility and advanced thickness scalability[1].The ferroelectric tunnel junction(FTJ)developed by the integration of FE HfO_(2) on Si/SiO_(2) provides a feasible route to realize high-density and energy-efficient nonvolatile memory[2].

关 键 词：FERROELECTRIC DIELECTRIC COMPLEMENTARY 

分 类 号：O469[理学—凝聚态物理] TP333[理学—电子物理学]