“SE+PERC”单晶硅太阳电池发射极方阻均匀性提升工艺的研究  

RESEARCH ON UNIFORMITY IMPROVEMENT PROCESS OF EMITTER SQUARE RESISTANCE IN"SE+PERC"MONO-Si SOLAR CELLS

作　　者：高荣刚 王丽婷 周啸颖 王守志 韩林芝 张书 Gao Ronggang;Wang Liting;Zhou Xiaoying;Wang Shouzhi;Han Linzhi;Zhang Shu(CECEP Solar Energy Technology(Zhenjiang)Co.,Ltd.,Zhenjiang 212132,China)

机构地区：[1]中节能太阳能科技(镇江)有限公司,镇江212132

出　　处：《太阳能》2023年第10期45-54,共10页Solar Energy

摘　　要：针对“SE+PERC”单晶硅太阳电池制备过程中,管式扩散炉扩散后硅片发射极方阻均匀性差的问题,在扩散工艺的“预沉积”步骤设计小氮气(N_(2))流量、氧气(O_(2))流量、炉内压强参数变化实验,研究小N_(2)流量、O_(2)流量和炉内压强变化对发射极方阻、方阻均匀性及太阳电池电性能的影响。研究结果表明:通过调整小N_(2)流量、O_(2)流量及扩散过程中的炉内压强可以有效提高发射极方阻均匀性,并提高太阳电池的光电转换效率。在小N_(2)流量为1000 sccm、O_(2)流量为600 sccm、炉内压强为80 kPa的工艺条件下可实现发射极的方阻均匀性最佳,均值为4.94%;此时“SE+PERC”单晶硅太阳电池的光电转换效率为23.11%。In response to the problem of poor uniformity of emitter square resistance of silicon wafers after diffusion in a tube diffusion furnace during the preparation process of“SE+PERC”mono-Si solar cells,this paper designs experiments on the parameter changes such as small N2 flow rate,O_(2)flow rate,and furnace pressure in the“pre deposition”step of the diffusion process to study the effects of small N_(2)flow rate,O_(2)flow rate,and furnace pressure changes on emitter square resistance,square resistance uniformity,and solar cell electrical performance.The research results show that adjusting the small N_(2)flow rate,O_(2)flow rate,and furnace pressure during the diffusion process can effectively improve the uniformity of emitter square resistance and improve the photoelectric conversion efficiency of solar cells.Under the process conditions of small N_(2)flow rate of 1000 sccm,O_(2)flow rate of 600 sccm,and furnace pressure of 80 kPa,the best uniformity of emitter square resistance can be achieved,with an average of 4.94%,and the photoelectric conversion efficiency of“SE+PERC”mono-Si solar cells is 23.11%.

关 键 词：太阳电池 选择性发射极 钝化发射极背接触 管式扩散 气体流量 炉内压强 方阻均匀性 电性能 

分 类 号：TM914.41[电气工程—电力电子与电力传动]