基于FEMAG软件的300CM单晶硅热场特征仿真  

Simulation of Thermal Field Characteristics of 300CM Monocrystalline Silicon Based on FEMAG Software

作　　者：惠宝锋[1] 马元良[1] 高俊伟 宋生宏 HUI Bao-feng;MA Yuan-liang;GAO Jun-wei;SONG Sheng-hong(School of Physics and Electronic Information Engineering,Qinghai Minzu University,Xining Qinghai 810007,China)

机构地区：[1]青海民族大学物理与电子信息工程学院,青海西宁810007

出　　处：《计算机仿真》2023年第8期284-288,307,共6页Computer Simulation

基　　金：青海省重点研发与转化项目(2021-GX-C01);青海民族大学校级重点项目(2021XJGH02)。

摘　　要：为获取最优单晶硅生长参数,利用FEMAG软件完成300CM单晶硅热场特征的模拟。应用FEMAG软件的Furgeo、Crygeo模块获取炉体、晶体的几何结构。利用IniMesh得到热场的总体几何结构,通过GemMesh模块划分热场总体几何结构网格,并通过设定具体参数获取最优非结构网格,根据已经确定的材料基础数量、晶体原理位置和熔体自由表面位置建立热场模型,仿真分析300CM单晶硅热场特征。实验结果表明:300CM单晶硅熔体在水平磁场下的流动具有三维非对称性;拉速几乎不影响单晶硅熔体热场分布;加强型热屏影响下热场的各种固液界面形状变化最小、最平坦,熔体在纵向温度梯度上的变化量最少;坩埚转速加快不影响固液界面的温度梯度。In order to obtain the optimal growth parameters of monocrystalline silicon,FEMAG software was used to complete the simulation of thermal field characteristics of 300CM monocrystalline silicon.Furgeo and Crygeo modules in FEMAG software were used to obtain the geometric structure of melt and crystal.IniMesh was used to obtain the overall geometry of the thermal field.Moreover,the Geometric mesh of the thermal field was divided by the GemMesh module,and then the optimal unstructured mesh was obtained by specific parameters.In the meanwhile,the model of the thermal field was built by the determined quantity of materials,crystal principle and melt free-surface position.Finally,the thermal field characteristics of 300cm monocrystalline silicon were simulated and analyzed.Experimental results show that the flow of 300cm monocrystalline silicon melt under a horizontal magnetic field has 3D asymmetry.The casting speed has very little impact on the thermal field distribution of monocrystalline silicon melt.Under the influence of the reinforced heat shield,the shape change of various solid-liquid interfaces in the thermal field is minimal,and the change of melt in the longitudinal temperature gradient is minimal.In addition,the increase of crucible rotation rate does not affect the temperature gradient of the solid-liquid interface.

关 键 词：单晶硅 热场特征 流动控制 有限元模型 熔体/晶体 

分 类 号：TP391.9[自动化与计算机技术—计算机应用技术] TN304.053[自动化与计算机技术—计算机科学与技术]