80 Gb/s高速PAM4调制850 nm垂直腔面发射激光器  

80 Gb/s High Speed PAM4 Modulated 850 nm Vertical-cavity Surface-emitting Laser

作　　者：王延靖 佟存柱[1,2] 栾晓倩 蒋宁 佟海霞 汪丽杰 田思聪[1] 孟博 WANG Yanjing;TONG Cunzhu;LUAN Xiaoqian;JIANG Ning;TONG Haixia;WANG Lijie;TIAN Sicong;MENG Bo(State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;Jlight Semiconductor Technology Co.,Ltd,Changchun 130031,China)

机构地区：[1]中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室,吉林长春130033 [2]吉光半导体科技有限公司,吉林长春130031

出　　处：《发光学报》2023年第10期1811-1815,共5页Chinese Journal of Luminescence

基　　金：国家重点研发计划(2018YFB2201000,2021YFB2801000);王宽城教育基金(GJTD-2020-10);高功率半导体激光国家重点实验室基金项目(2022-CCLG-ZDSYS-005)。

摘　　要：展示了高速直接调制850 nm氧化物限制垂直腔面发射激光器(VCSEL)的结果。优化设计应变InGaAs/AlGaAs量子阱以实现高微分增益,通过表面刻蚀来调节光子寿命实现响应平坦化。研制的氧化物孔径约7μm的VCSEL具有平坦的频率响应,3 dB调制带宽为24 GHz,相对噪声强度值-155 dB/Hz,未采用任何预加重和均衡技术情况下PAM4调制数据传输速率达80 Gb/s。We present the results of a high-speed direct modulation 850 nm oxide confined vertical cavity surface emitting laser(VCSEL),optimize the design of strain InGaAs/AlGaAs quantum wells to achieve high differential gain,and adjust the photon lifetime through surface etching to achieve response flattening.The developed VCSEL with an oxide aperture of about 7μm has a flat frequency response,a 3 dB modulation bandwidth of 24 GHz,and a relative noise intensity value of-155 dB/Hz.Without any pre-emphasis and equalization technology,the PAM4 modulation data transmission rate can reach 80 Gb/s.

关 键 词：垂直腔面发射激光器 高速 PAM4调制 

分 类 号：TN248.4[电子电信—物理电子学]