Ni掺杂SnO_(2)纳米棒的室温氢气敏感性能研究  

Room-temperature hydrogen sensing performance of the Ni-doped SnO_(2)nanorods

作　　者：丁思祺 杨洋[1] 谈论 王钊[1] 杨飘云 DING Siqi;YANG YANG;TAN Lun;WANG Zhao;YANG Piaoyun(School of Microelectronics,Hubei University,Wuhan 430062,China;College of Physics and Electromechanical Engineering,Hubei University of Education,Wuhan 430205,China)

机构地区：[1]湖北大学微电子学院,湖北武汉430062 [2]湖北第二师范学院物理与机电工程学院,湖北武汉430205

出　　处：《电子元件与材料》2023年第9期1087-1093,共7页Electronic Components And Materials

基　　金：国家自然科学基金面上项目(52072115)。

摘　　要：氢气是一种理想的可再生清洁能源。利用快速灵敏、准确可靠的氢气传感器对环境中的氢气浓度进行实时监测,是保障氢能安全应用的关键。研制可在常温下快速准确运行的新型半导体氢气传感器是本领域研究人员关注的热点。本文采用一步水热法合成Ni掺杂SnO_(2)纳米棒,研究了Ni掺杂含量对产物物相、形貌、组分和氢敏性能的影响。结果表明,Ni掺杂SnO_(2)纳米棒为四方金红石结构,随着Ni/Sn原子百分比从1.1%提升至16.7%,纳米棒直径降低、长径比提升,对3000ppm氢气的响应度呈先增大后减小的趋势。当Ni/Sn原子百分比为3.7%时,所得氢敏元件性能最佳,其响应度和响应时间分别为79.11和71 s,且具有优异氢气选择性。Ni掺杂引起材料长径比和氧空位缺陷浓度增加是材料性能提升的主要原因,该方法可为开发高性能室温半导体氢气传感器提供可行途径。Hydrogen is regarded as one of the most promising renewable and clean energy.The detection of the hydrogen concentration by using fast,sensitive,stable,and reliable hydrogen sensors is the key to the safe application of the hydrogen energy.The semiconductor hydrogen sensors with fast and sensitive hydrogen sensing at room temperature has attracted great attention.In this work,the Ni-doped SnO_(2)nanorods were synthesized by a simple one-step hydrothermal method.The effect of Ni doping content on the phase,morphology,composition and hydrogen sensing performance of the products was investigated.The results show that as-prepared Ni-doped SnO_(2)nanorods has tetragonal rutile structure.With the increase of Ni/Sn atomic ratio from 1.1%to 16.7%,the diameter of the nanorods decreased and the aspect ratio increased,while the response to 3000ppm hydrogen increased first and then decreased.The sensor exhibits the optimized sensing performance with the Ni/Sn atomic ratio of 3.7%,with the sensor response and response time of 79.11 and 71 s,respectively.The device also exhibits outstanding hydrogen selectivity.The performance enhancement can be attributed to the increase of the aspect ratio and the oxygen defect contents induced by the Ni doping,which can provide a feasible way for the development of highperformance room-temperature semiconductor hydrogen sensors.

关 键 词：氢气传感器 二氧化锡 纳米棒 掺杂 室温敏感 

分 类 号：TB34[一般工业技术—材料科学与工程]