Technology Dependency of TID Response for a Custom Bandgap Voltage Reference in 65 nm to 28 nm Bulk CMOS Technologies  

作　　者：LIANG Bin WEN Yi CHEN Jianjun CHI Yaqing YAO Xiaohu 

机构地区：[1]College of Computer Science,National University of Defense Technology,Changsha 410073,China

出　　处：《Chinese Journal of Electronics》2023年第6期1286-1292,共7页电子学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(61974163,62104257);the High-level Innovative Talent Training Plan of NUDT(4142D125106,434517212306).

摘　　要：Total ionizing dose(TID)radiation response of the custom bandgap voltage reference(BGR)fabricated with 65 nm,40 nm and 28 nm commercial bulk CMOS technologies is investigated.TID response is assessed employing Co-60 gamma ray source.The measurements indicate that the voltage reference is reduced by 5.67%in 28 nm,0.56%in 40 nm and increased by 1.28%in 65 nm devices under irradiation up to 1.2 Mrad(Si)TID.After 48 hours of annealing,the voltage reference changes are just−1.84%in 28 nm,0.14%in 40 nm and 1.14%in 65 nm.The obtained results demonstrate that the custom BGR has naturally superior TID response due to the circuit design margins.

关 键 词：Bandgap voltage reference Total ionizing dose Co-60 gamma ray irradiation 65 nm to 28 nm bulk CMOS technologies 

分 类 号：TN432[电子电信—微电子学与固体电子学]