烧结温度对掺杂B_(2)O_(3)的SnO_(2)压敏电阻微观结构和电气特性的影响  

The Effect of Sintering Temperature on the Microstructure and Electrical Properties of SnO^(2) Varistor Doped with B_(2)O_(3)

作　　者：杨兴 赵洪峰[1] 吴宇航 谢清云 YANG Xing;ZHAO Hongfeng;WU Yuhang;XIE Qingyun(The Wind Solar Storage Division of State Key Laboratory of Control and Simulation of Power System and Generation Equipment,School of Electrical Engineering,Xinjiang University,Urumqi 830046,China;Xidian Surge Arrester Co.,Ltd.,Xi'an 710200,China)

机构地区：[1]新疆大学电气工程学院电力系统及大型发电设备安全控制和仿真国家重点实验室风光储分室,乌鲁木齐830046 [2]西电避雷器有限责任公司,西安710200

出　　处：《电瓷避雷器》2023年第5期72-76,共5页Insulators and Surge Arresters

摘　　要：研究了不同的烧结温度对掺杂B_(2)O_(3)的SnO_(2)压敏电阻的影响。通过电子扫瞄显微镜SEM图和X射线衍射图,对样品的内部结构进行了微观表征;测试了不同温度下SnO_(2)压敏电阻样品小电流区的伏安特性曲线。实验结果表明,烧结温度为1 325℃,SnO_(2)压敏电阻样品的晶粒尺寸比较均匀;样品表现出最佳的电气参数:泄漏电流为18.93μA/cm^(2),非线性系数为28.93,电压梯度为378 V/mm。The influence of sintering temperature on the microstructure and electrical properties of SnO_(2) varistors doped with B_(2)O_(3) was studied.Through the electron scanning microscope and X-ray diffraction pattern,the internal structure of the sample was microscopically characterized;the volt-ampere characteristic curve of the SnO_(2) varistor sample in the small current area at different temperatures was tested.The experimental results show that the sintering temperature is 1325℃,and the grain size of the SnO_(2) varistor sample is relatively uniform;the sample shows the best electrical parameters:leakage current is 18.93μA/cm^(2),nonlinear coefficient is 28.93and voltage gradient is 378 V/mm.

关 键 词：微观结构 电气特性 伏安特性曲线 泄漏电流 

分 类 号：TM54[电气工程—电器] TM862