Fabrication of highly luminescent TiO_(2):Eu^(3+) thin film with low annealing temperature requirement by co-doping with Sn^(4+) ions  

作　　者：Lu Zhang Bolin Zheng Junyi Zhai Tao Lin 

机构地区：[1]Laboratory of Optoelectronic Materials and Detection Technology,Guangxi Key Laboratory for Relativistic Astrophysics,School of Physical Science and Technology,Guangxi University,Nanning,530004,China [2]Center on Nanoenergy Research,School of Physical Science and Technology,Guangxi University,Nanning,530004,China [3]CAS Center for Excellence in Nanoscience,Beijing Key Laboratory of Micro-nano Energy and Sensor,Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,Beijing,100083,China

出　　处：《Journal of Rare Earths》2023年第10期1494-1502,I0001,共10页稀土学报（英文版）

基　　金：the National Natural Science Foundation of China(61504030,11704081);Natural Science Foundation of Guangxi Province(2020GXNSFAA238043,2020GXNSFAA297182,2017GXNSFGA198005);the Special Fund for Guangxi Distinguished Professors(Bagui Yingcai&Bagui Xuezhe)2017AD22006。

摘　　要：Rare earth(RE)-doped TiO_(2)thin films possess important applications in modern optoelectronic devices.However,the high annealing temperature requirement remains a critical restriction in device fabrications.In this work,TiO_(2)thin films doped with trivalent europium(Eu^(3+))ions were fabricated by a convenient sol-gel approach and subsequent annealing treatment.Interestingly,it is found that the optimal post-annealing temperature of TiO_(2):Eu^(3+)thin film is dramatically reduced from 800 to 300℃by incorporating 10 at%Sn^(4+)into the sol precursor.The Sn-incorporated film annealed at 300℃shows a 4-fold enhancement in photoluminescence(PL)intensity related to Eu^(3+)ions to the optimized Sn-free film.Systematic analysis reveals that this enhancement is attributed to Sn element promoting the crystallization of both anatase TiO_(2)and rutile SnO_(2)clusters at 300℃,which provides sufficient SnO_(2)/TiO_(2)crystal boundary facilitating Eu^(3+)to occupy and sensitized by SnO_(2)crystals.These results provide valuable insights into fabricating highly luminescent RE-doped TiO_(2)thin films with low annealing temperature requirement,which is essential for designing optoelectronic devices based on RE materials more freely in the future.

关 键 词：Rare earths Titanium oxide PHOTOLUMINESCENCE SOL-GEL POST-ANNEALING 

分 类 号：TB383.2[一般工业技术—材料科学与工程]