Preparation of CeO_(2) abrasives by reducing atmosphere-assisted molten salt method for enhancing their chemical mechanical polishing performance on SiO_(2)substrates  

作　　者：Ning Xu Jiahui Ma Qi Liu Yuxin Luo Yongping Pu 

机构地区：[1]School of Material Science and Engineering,Shaanxi University of Science&Technology,Xi'an,710021,China [2]Shaanxi Key Laboratory of Green Preparation and Functionalization for Inorganic Materials,Xi'an,710021,China

出　　处：《Journal of Rare Earths》2023年第10期1627-1635,I0006,共10页稀土学报（英文版）

基　　金：the National Natural Science Foundation of China(51905324);the Scientific Research Program Funded by Shaanxi Provincial Education Department(20JK0545);the Doctoral Scientific Research Startup Foundation of Shaanxi University of Science and Technology(2018BJ-14)。

摘　　要：Ce^(3+)as the active site on the CeO_(2)abrasive surface is the key to enhancing the material removal rate(MRR).The CeO_(2)abrasives with high chemical activity were prepared by the molten salt method under a reducing atmosphere.The crystal structure and morphology of CeO_(2)abrasive s were characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM),transmission electron microscopy(TEM),Fourier transform infrared spectroscopy(FT-IR),ultraviolet—visible diffuse reflectance spectroscopy(UV-Vis DRS),and X-ray photoelectron spectroscopy(XPS).The CeO_(2)abrasives were obtained under different atmospheres(Air,Ar,and Ar/H_(2)).With the enhancement of the reducing atmosphere,the morphology of the abrasives transforms from spherical to octahedral,while more oxygen vacancies and Ce^(3+)are generated on the surface of CeO_(2)abrasives.The CMP experiments show that the MRRs of the CeO_(2)-Air,CeO_(2)-Ar,and CeO_(2)-Ar/H_(2)abrasives on SiO_(2)substrates are 337.60,578.74,and 691.28 nm/min,respectively.Moreover,as confirmed by atomic force microscopy(AFM),the substrate surfaces exhibit low roughness(20.5 nm)after being polished using all of the prepared samples.Especially,the MRR of CeO_(2)-Ar/H_(2)abrasives is increased by 104.76%compared with CeO_(2)-air abrasives.The improved CMP performance is attributed to the increased Ce^(3+)concentration and the octahedral morphology of the abrasives enhancing the chemical reaction and mechanical removal at the abrasive-substrate interface.

关 键 词：CeO_(2) Chemical mechanical polishing(CMP) Reducing atmosphere Material removal rate(MRR) Molten salt method Rare earths 

分 类 号：TQ133.3[化学工程—无机化工] TN305[电子电信—物理电子学]