多孔GaN阵列结构的制备及其光电性能  

Preparation and Photoelectric Properties of Porous GaN Array Structures

作　　者：徐杰 贾伟[1,2] 董海亮 贾志刚[1,2] 李天保 余春燕 张竹霞[1,2] 许并社 Xu Jie;Jia Wei;Dong Hailiang;Jia Zhigang;Li Tianbao;Yu Chunyan;Zhang Zhuxia;Xu Bingshe(Key Laboratory of Interface Science and Engineering Inadvanced Materials of Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China;Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering,Taiyuan 030032,China;Institute of Atomic and Molecular Science,Shaanxi University of Science and Technology,Xi'an 710021,China)

机构地区：[1]太原理工大学新材料界面科学与工程教育部重点实验室,太原030024 [2]山西浙大新材料与化工研究院,太原030032 [3]陕西科技大学材料原子和分子科学研究所,西安710021

出　　处：《微纳电子技术》2023年第9期1405-1413,共9页Micronanoelectronic Technology

基　　金：国家自然科学基金(61604104,21972103,61904120);山西省自然科学基金(201901D111109);山西省重点研发计划项目(201903D111009);山西浙大新材料与化工研究院项目(2021SX-AT002)。

摘　　要：以硝酸钠溶液作为腐蚀液,通过电化学和紫外辅助电化学相结合的两步法腐蚀GaN薄膜,制备出了多孔阵列结构。采用扫描电子显微镜(SEM)表征了多孔阵列结构的形貌,结果表明多孔GaN阵列结构排列整齐,孔径分布均匀,其平均孔径为24.1 nm,孔隙密度为3.86×10^(10 )cm^(-2),深度为2μm。利用X射线衍射仪(XRD)和Raman光谱仪表征了多孔GaN阵列的晶体结构,与平面GaN薄膜相比,多孔GaN阵列结构的晶体质量更好,且具有较低的残余应力。使用光致发光(PL)光谱和紫外-可见光(UV-Vis)吸收光谱表征了GaN的光学性能,与平面GaN薄膜相比,多孔GaN阵列结构的光致发光强度和光吸收能力有较大提升。通过电化学工作站对多孔GaN阵列结构的光电性能进行测试,在1.23 V偏压下,多孔GaN阵列结构的光电流是GaN平面结构的约3.36倍,最大光电转化效率ηmax是平面GaN薄膜的约3.5倍。该研究为多孔GaN阵列结构的应用提供了一定的实验数据和理论指导。With sodium nitrate solution as etching solution,GaN films were etched by a two-step method combining electrochemistry and UV-assisted electrochemistry,and the porous array structures were prepared.Scanning electron microscopy(SEM)was used to characterize the morphology of the porous array structure.The results show that the porous GaN array structure is neatly arranged with uniform pore size distribution.The average pore size is 24.1 nm,the pore density is 3.86×10^(10) cm^(-2),and the depth is 2μm.The crystal structure of the porous GaN array was characterized by X-ray diffractometer(XRD)and Raman spectrometer.Compared with planar GaN thin films,the porous GaN array structure has better crystal quality and lower residual stress.The photoluminescence(PL)spectra and ultraviolet-visible light(UV-Vis)absorption spectra were used to characterize the optical properties of GaN.Compared with planar GaN films,the photoluminescence intensity and light absorption capacity of the porous GaN array structure are greatly improved.The photoelectric performance of the porous GaN array structure was tested by electrochemical workstation.The photocurrent of the porous GaN array structure is about 3.36 times that of the planar GaN structure at a bias voltage of 1.23 V,and the maximum photoelectric conversion efficiencyηmax is about 3.5 times that of the planar GaN thin film.The research provides some experimental data and theoretical guidance for the application of porous GaN array structures.

关 键 词：氮化镓(GaN) 多孔阵列结构 电化学腐蚀 紫外辅助电化学腐蚀 两步腐蚀法 光电性能 

分 类 号：O734[理学—晶体学] TN304.23[电子电信—物理电子学]