某型雷达低噪声放大器的HPM毁伤效应研究  

Research into the High Power Microwave Damage Effect of Low Noise Amplifier for a Certain Radar

作　　者：许一 孟藏珍[1] 项建涛[1] 许红波[1] 胡欣[1,3] XU Yi;MENG Cangzhen;XIANG Jiantao;XU Hongbo;HU Xin(Air Force Early Warning Academy,Wuhan 430019,China;Unit 95969 of PLA,Wuhan 430919,China;Unit 93498 of PLA,Shijiazhuang 050000,China)

机构地区：[1]空军预警学院,湖北武汉430019 [2]解放军95969部队,湖北武汉430019 [3]解放军93498部队,河北石家庄050000

出　　处：《舰船电子对抗》2023年第5期98-102,共5页Shipboard Electronic Countermeasure

摘　　要：低噪声放大器(LNA)作为雷达接收系统中最敏感的部件,极易受到高功率微波(HPM)武器的前门耦合攻击,从而影响雷达整体性能。首先分析了HPM对LNA的毁伤机理,然后设计了LNA的HPM注入毁伤实验平台,对某型雷达的LNA的毁伤机理和毁伤阈值进行实验验证。结果表明,该型雷达的LNA不受HPM线性效应影响,当HPM超过其毁伤阈值后,器件内的场效应放大器(FET)栅源之间发生热烧融,造成LNA受到永久性损伤,性能失效。本结论可为该型雷达装备抗HPM毁伤效能评估和HPM防护设计提供数据支撑。As the most sensitive component in the radar receiving system,the low noise amplifier(LNA)is vulnerable to the coupling attack of front door from high-power microwave(HPM)weapon,which affects the overall performance of the radar.This paper first analyzes the damage mechanism of HPM to LNA,and then designs an HPM injection damage experimental platform for the LNA to verify the damage mechanism and damage threshold of the LNA of a certain type of radar.The results show that the LNA of this radar is not affected by the linear effect of HPM.When the HPM exceeds its damage threshold,thermal melting occurs among the field effect transistor(FET)gate sources in the device,resulting in permanent damage to LNA and performance failure.This conclusion can provide data support for the performance evaluation of anti-HPM damage of this radar equipment and the protection design of HPM.

关 键 词：低噪声放大器 高功率微波 毁伤效应 注入毁伤实验 

分 类 号：TN722.3[电子电信—电路与系统]