GeSn光电薄膜及其研究进展  

GeSn Photoelectric Thin Film and Research Development

作　　者：李倩影 崔敏[1] 于添景 邓金祥[1] 高红丽 原安娟[1] Li Qianying;Cui Min;Yu Tianjing;Deng Jinxiang;Gao Hongli;Yuan Anjuan(Faculty of Science,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学理学部,北京100124

出　　处：《半导体技术》2023年第9期729-740,共12页Semiconductor Technology

基　　金：国家自然科学基金青年基金资助项目(12204026);北京市科技新星计划资助项目(Z211100002121079)。

摘　　要：GeSn作为一种新型低成本、绿色半导体材料,具有带隙和晶格常数可调、载流子迁移率高、光吸收性能好和光响应度高等优势,在光电器件领域备受关注,在光伏和热光伏领域不断取得新的突破。对GeSn材料的基本物性、实验制备、应用研究和进展进行了详细地介绍。着重对GeSn在光伏电池和热光伏电池的研究进行了分析,并对其在光伏和热光伏领域的发展进行了展望,希望未来能为高效叠层太阳电池的研究提供新思路和新方法。As a new low-cost green semiconductor material,GeSn has the advantages of adjustable bandgap and lattice constant,high carrier mobility,good optical absorption performance and high optical responsivity,and it has received much attention in the photoelectric device field and has continuously made new breakthroughs in the photovoltaic and thermal photovoltaic fields.The basic physical properties,experimental preparation,application research and development of GeSn materials are introduced in detail.Emphatically,the research of GeSn in photovoltaic cells and thermal photovoltaic cells is analyzed,and the developments in the photovoltaic and thermal photovoltaic fields are prospected.It is going to provide new ideas and methods for the research of high efficiency stacked solar cells.

关 键 词：GeSn 基本物性 光电器件 光伏电池 热光伏电池 

分 类 号：TN304.2[电子电信—物理电子学] TN36[理学—半导体物理] O47[理学—物理]