CMOS器件热载流子注入老化的SPICE建模与仿真  

SPICE Modeling and Simulation of HCI Degradation of CMOS Devices

作　　者：王正楠 张昊 李平梁 Wang Zhengnan;Zhang Hao;Li Pingliang(Shanghai Huahong Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China)

机构地区：[1]上海华虹宏力半导体制造有限公司,上海201203

出　　处：《半导体技术》2023年第10期902-910,共9页Semiconductor Technology

摘　　要：为了准确预测芯片电路寿命,建立了一种能成功双向预测CMOS器件寿命和器件老化程度的可靠性模型。结合改进的衬底电流方程、漏源电流和时间变量t,组建了Age(t)模型。通过挑选合适的BSIM4模型参数,联合Age(t)方程构建指数函数关系式,建立了一种可植入EDA工具内的CMOS老化SPICE模型,并提出了可获得精确模型性能的参数提取方法。在静态持续加电条件下,单级器件的仿真结果与实验数据吻合良好,并且表现出对寿命和老化率的良好预测性。采用该模型对由3级反相器组建的环形振荡电路进行动态信号仿真,得到20年后电路输出波形,验证了模型的合理性。To predict the lifetime of chip circuit accurately,a reliability model which can successfully bi-predict the lifetime and degradation degree of the CMOS device was established.Combined with the improved substrate current equation,the drain source current and the time variation(t),an Age(t)model was built.By selecting the proper BSIM4 model parameters and combining the Age(t)equation to construct the exponential function relation,a CMOS aging SPICE model which can be embedded in EDA tool was established.The parameter extraction method was proposed to achieve the accurate model performance.Under the condition of static continuous voltage,the simulation results of the single-staged device are in good agreement with experimental data,and exhibit good prediction for lifetime and degradation rate.A dynamic signal of the ring oscillator circuit composed of 3-staged inverters was simulated with the model,and the output waveform of the circuit after 20 years was obtained,verifying the rationality of the model.

关 键 词：热载流子注入(HCI) 可靠性仿真 老化模型 模型参数提取 SPICE模型 

分 类 号：TN386.1[电子电信—物理电子学] TN302