检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:袁盛章 王海斗 董丽虹 刘彬[4] 秦红玲 YUAN Sheng-zhang;WANG Hai-dou;DONG Li-hong;LIU Bin;QIN Hong-ling(College of Machinery&Power Engineering,China Three Gorges University,Yichang 443002,China;National Engineering Research Center for Mechanical Product Remanufacturing,Army Academy of Armored Forces,Beijing 100072,China;National Key Laboratory for Remanufacturing,Army Academy of Armored Forces,Beijing 100072,China;School of Materials Science and Engineering,Jiangsu University of Science and Technology,Zhenjiang 212003,China;School of Mechanical Engineering and Automation,Fuzhou University,Fuzhou 350116,China)
机构地区:[1]三峡大学机械与动力学院,湖北宜昌443002 [2]陆军装甲兵学院机械产品再制造国家工程研究中心,北京100072 [3]陆军装甲兵学院再制造技术国防科技重点实验室,北京100072 [4]江苏科技大学材料科学与工程学院,江苏镇江212003 [5]福州大学机械工程及自动化学院,福建福州350116
出 处:《材料热处理学报》2023年第10期1-9,共9页Transactions of Materials and Heat Treatment
基 金:某类重点项目(ZD-302-12);国家自然科学基金(52175206,52130509)。
摘 要:传统等离子体渗氮存在着渗氮时间长、渗氮不均匀等问题,因此提高等离子体渗氮效果和渗氮速率是等离子体渗氮技术发展的重点方向。本文综述了活性屏等离子体渗氮的技术原理和近年来的发展特点,梳理了多元离子共渗、表面自纳米化预处理和预氧化3种催化技术在传统等离子体渗氮过程中的作用机理和目前的发展现状。多种催化技术相结合的传统等离子体渗氮工艺和活性屏等离子体渗氮的催化工艺将是未来等离子体渗氮发展的重要方向。Traditional plasma nitriding has problems such as long nitriding time and uneven nitriding.Therefore,improving the effectiveness and rate of plasma nitriding is a key direction for the development of plasma nitriding technology.This article reviews the technical principles of active screen plasma nitriding and its development characteristics in recent years,and summarizes the action mechanisms of three catalytic techniques,namely multiple ion co-diffusion,surface self-nanocrystallization pretreatment and pre-oxidation in the traditional plasma nitriding process and the current development status.The traditional plasma nitriding process combined with various catalytic technologies and the catalytic process of active screen plasma nitriding will be an important direction for the development of plasma nitriding in the future.
关 键 词:活性屏等离子体渗氮 多元离子共渗 表面自纳米化 预氧化
分 类 号:TG156.8[金属学及工艺—热处理]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.7