铌酸锂晶片的抛光机理及损伤层控制研究  

Study on Polishing Mechanism and Damage Layer Control of Lithium Niobate Wafers

作　　者：杨春颖[1] 常耀辉 陈亚楠[1] YANG Chunying;CHANG Yaohui;CHEN Yanan(The 46th Research Institute of CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2023年第5期26-28,85,共4页Equipment for Electronic Products Manufacturing

摘　　要：铌酸锂的抛光机理复杂,抛光片的损伤层受多种因素的影响,其机械损伤来源主要有两个途径,其一是晶片在抛光前各道工序加工中引入的损伤,这可以通过增加抛光去除量加以控制,其二是在抛光过程中带来的机械损伤,抛光液的组分、pH值、抛光布、抛光压力、抛光盘转速等条件都与损伤层有直接的关系。这些参数都是通过改变抛光过程中机械作用和化学作用的平衡来影响损伤层,因此控制抛光过程中二者的平衡才是控制损伤的关键。The polishing mechanism of lithium niobate is complex,the damage layer of polished wafer is affected by a variety of factors,and the source of mechanical damage is mainly in two ways,one is the damage introduced in each process of the wafer before polishing,which can be controlled by increasing the amount of polishing removal,and the other is the mechanical damage brought by the polishing process.The composition of the polishing liquid,PH value,polishing cloth,polishing pressure,rotating speed of the polishing disc and other conditions are directly related to the damage layer.These parameters affect the damage layer by changing the balance of mechanical action and chemical action in the polishing process,so controlling the balance of the two actions in the polishing process is the key to control the damage.

关 键 词：铌酸锂 抛光 损伤层 SiO_(2)胶体 

分 类 号：TN305.2[电子电信—物理电子学]