Perspectives of spin-valley locking devices  

作　　者：陶玲玲 Lingling Tao(School of Physics,Harbin Institute of Technology,Harbin 150001,China)

机构地区：[1]School of Physics,Harbin Institute of Technology,Harbin 150001,China

出　　处：《Chinese Physics B》2023年第10期15-21,共7页中国物理B（英文版）

基　　金：supported by the Fundamental Research Funds for the Central Universities(Grant No.FRFCU5710053421);the National Natural Science Foundation of China(Grant No.12274102)。

摘　　要：Valleytronics is an emerging field of research which utilizes the valley degree of freedom to encode information.However,it is technically nontrivial to produce a stable valley polarization and to achieve efficient control and manipulation of valleys.Spin–valley locking refers to the coupling between spin and valley degrees of freedom in the materials with large spin–orbit coupling(SOC)and enables the manipulation of valleys indirectly through controlling spins.Here,we review the recent advances in spin–valley locking physics and outline possible device implications.In particular,we focus on the spin–valley locking induced by SOC and external electric field in certain two-dimensional materials with inversion symmetry and demonstrate the intriguing switchable valley–spin polarization,which can be utilized to design the promising electronic devices,namely,valley-spin valves and logic gates.

关 键 词：spin–valley locking SPINTRONICS valleytronics spin–orbit coupling 

分 类 号：O469[理学—凝聚态物理]