Ambipolar performance improvement of the C-shaped pocket TFET with dual metal gate and gate–drain underlap  

作　　者：赵梓淼 陈子馨 刘伟景 汤乃云 刘江南 刘先婷 李宣霖 潘信甫 唐敏 李清华 白伟 唐晓东 Zi-Miao Zhao;Zi-Xin Chen;Wei-Jing Liu;Nai-Yun Tang;Jiang-Nan Liu;Xian-Ting Liu;Xuan-Lin Li;Xin-Fu Pan;Min Tang;Qing-Hua Li;Wei Bai;Xiao-Dong Tang(College of Electronics and Information Engineering,Shanghai University of Electric Power,Shanghai 200090,China;Semiconductor Manufacturing International Corporation,Shanghai 201203,China;Radiwave Technologies Corporation Limited,Shenzhen 518172,China;Key Laboratory of Polar Materials and Devices,East China Normal University,Shanghai 200041,China)

机构地区：[1]College of Electronics and Information Engineering,Shanghai University of Electric Power,Shanghai 200090,China [2]Semiconductor Manufacturing International Corporation,Shanghai 201203,China [3]Radiwave Technologies Corporation Limited,Shenzhen 518172,China [4]Key Laboratory of Polar Materials and Devices,East China Normal University,Shanghai 200041,China

出　　处：《Chinese Physics B》2023年第10期700-707,共8页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.52177185 and 62174055)。

摘　　要：Dual-metal gate and gate–drain underlap designs are introduced to reduce the ambipolar current of the device based on the C-shaped pocket TFET(CSP-TFET).The effects of gate work function and gate–drain underlap length on the DC characteristics and analog/RF performance of CSP-TFET devices,such as the on-state current(I_(on)),ambipolar current(I_(amb)),transconductance(g_(m)),cut-off frequency(f_(T))and gain–bandwidth product(GBP),are analyzed and compared in this work.Also,a combination of both the dual-metal gate and gate–drain underlap designs has been proposed for the C-shaped pocket dual metal underlap TFET(CSP-DMUN-TFET),which contains a C-shaped pocket area that significantly increases the on-state current of the device;this combination design substantially reduces the ambipolar current.The results show that the CSP-DMUN-TFET demonstrates an excellent performance,including high I_(on)(9.03×10^(-4)A/μm),high I_(on)/I_(off)(~10^(11)),low SS_(avg)(~13 mV/dec),and low I_(amb)(2.15×10^(-17)A/μm).The CSP-DMUN-TFET has the capability to fully suppress ambipolar currents while maintaining high on-state currents,making it a potential replacement in the next generation of semiconductor devices.

关 键 词：tunnel field effect transistor ambipolar current dual metal gate gate–drain underlap 

分 类 号：TN386[电子电信—物理电子学]