Multilevel optoelectronic hybrid memory based on N-doped Ge_(2)Sb_(2)Te_(5)film with low resistance drift and ultrafast speed  

作　　者：吴奔 魏涛 胡敬 王瑞瑞 刘倩倩 程淼 李宛飞 凌云 刘波 Ben Wu;Tao Wei;Jing Hu;Ruirui Wang;Qianqian Liu;Miao Cheng;Wanfei Li;Yun Ling;Bo Liu(Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices,School of Materials Science and Engineering,Suzhou University of Science and Technology,Suzhou 215009,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China)

机构地区：[1]Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices,School of Materials Science and Engineering,Suzhou University of Science and Technology,Suzhou 215009,China [2]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

出　　处：《Chinese Physics B》2023年第10期724-730,共7页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.62205231 and 22002102);the Postgraduate Research&Practice Innovation Program of Jiangsu Province,China(Grant No.KYCX223271);Jiangsu Key Laboratory for Environment Functional Materials。

摘　　要：Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed,scalable and non-volatile characteristics.However,the contradiction between thermal stability and operation speed is one of key factors to restrain the development of phase-change memory.Here,N-doped Ge_(2)Sb_(2)Te_(5)-based optoelectronic hybrid memory is proposed to simultaneously implement high thermal stability and ultrafast operation speed.The picosecond laser is adopted to write/erase information based on reversible phase transition characteristics whereas the resistance is detected to perform information readout.Results show that when N content is 27.4 at.%,N-doped Ge_(2)Sb_(2)Te_(5)film possesses high ten-year data retention temperature of 175℃and low resistance drift coefficient of 0.00024 at 85℃,0.00170 at 120℃,and 0.00249 at 150℃,respectively,owing to the formation of Ge–N,Sb–N,and Te–N bonds.The SET/RESET operation speeds of the film reach 520 ps/13 ps.In parallel,the reversible switching cycle of the corresponding device is realized with the resistance ratio of three orders of magnitude.Four-level reversible resistance states induced by various crystallization degrees are also obtained together with low resistance drift coefficients.Therefore,the N-doped Ge_(2)Sb_(2)Te_(5)thin film is a promising phase-change material for ultrafast multilevel optoelectronic hybrid storage.

关 键 词：multilevel optoelectronic hybrid memory N-doped Ge_(2)Sb_(2)Te_(5)thin film low resistance drift ultrafast speed 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TP333[自动化与计算机技术—计算机系统结构]