An accurate analytical surface potential model of heterojunction tunnel FET  

作　　者：关云鹤 黎欢 陈海峰 黄思伟 Yunhe Guan;Huan Li;Haifeng Chen;Siwei Huang(School of Electronic Engineering,Xi'an University of Posts and Telecommunications,Xi'an 710121,China)

机构地区：[1]School of Electronic Engineering,Xi'an University of Posts and Telecommunications,Xi'an 710121,China

出　　处：《Chinese Physics B》2023年第10期731-737,共7页中国物理B（英文版）

基　　金：Project supported in part by the National Natural Science Foundation of China (Grant No. 62104192);in part by the Natural Science Basic Research Program of Shaanxi Province (Grant No. 2021JQ-717)。

摘　　要：Based on the accurate and efficient thermal injection method, we develop a fully analytical surface potential model for the heterojunction tunnel field-effect transistor(H-TFET). This model accounts for both the effects of source depletion and inversion charge, which are the key factors influencing the charge, capacitance and current in H-TFET. The accuracy of the model is validated against TCAD simulation and is greatly improved in comparison with the conventional model based on Maxwell–Boltzmann approximation. Furthermore, the dependences of the surface potential and electric field on biases are well predicted and thoroughly analyzed.

关 键 词：surface potential model thermal injection method tunnel field-effect transistor HETEROJUNCTION 

分 类 号：TN386[电子电信—物理电子学]