改性半导体材料在光催化氧化降解气态甲苯中的研究进展  

Research progress of modified semiconductor materials in photocatalytic oxidation degradation of gaseous toluene

作　　者：刘思琦 杨晓洁 罗梦超 王首祎 赵毅[1] 郝润龙[1] LIU Si-qi;YANG Xiao-jie;LUO Meng-chao;WANG Shou-yi;ZHAO Yi;HAO Run-long(School of Environmental Science and Engineering,North China Electric Power University,Baoding 071000,China)

机构地区：[1]华北电力大学环境科学与工程系,河北保定071000

出　　处：《应用化工》2023年第10期2885-2889,共5页Applied Chemical Industry

基　　金：国家自然科学基金(52170108,51978262)。

摘　　要：综述了近年国内外改性半导体材料用于光催化降解甲苯的研究进展,详细介绍了掺杂金属和非金属、耦合半导体和负载载体等改性方法对半导体的结构和催化性能影响,分析并讨论了改性后半导体材料光催化脱除气态甲苯的效率和反应机制,提出研发可见光利用率和光子效率高及结构性能稳定的复合型改性半导体材料是光催化降解气态甲苯的研究方向。The research progress of modified semiconductor materials used in photocatalytic degradation of toluene was reviewed.The effects of modified methods such as doped metal or non-metal coupled semiconductor,supported semiconductor on the structure and catalytic performance of pure semiconductor are introduced in detail.The efficiency and reaction mechanism of photocatalytic removal of toluene by modified semiconductor materials were analyzed and discussed.It is suggested that the research direction of photocatalytic degradation of gaseous toluene is to develop compound modified semiconductor materials with high visible light efficiency,high photonic efficiency and stable structural properties.

关 键 词：光催化氧化 半导体 二氧化钛 甲苯 

分 类 号：TQ13[化学工程—无机化工] O643.36[理学—物理化学] O644.1[理学—化学]