低温烧结纳米银电子封装材料的研究进展  

Research progress of low temperature sintered nano silver electronic packaging materials

作　　者：胡雳 邹婉莹 杨德治 李永强 何海英 杨至灏 HU Li;ZOU Wanying;YANG Dezhi;LI Yongqiang;HE Haiying;YANG Zhihao(College of Materials Science and Hydrogen Ener gy,Foshan University,Foshan 528000,China;Guangdong Key Laboratory of Hydrogen Energy Technology,Foshan 528000,China)

机构地区：[1]佛山科学技术学院材料科学与氢能学院,广东佛山528000 [2]广东省氢能技术重点实验室,广东佛山528000

出　　处：《中国高新科技》2023年第16期85-86,共2页

基　　金：广东省基础与应用基础研究基金项目(2019B1515120008);广东省重点领域研发计划(2021B0101260001)。

摘　　要：随着第三代半导体器件的高速发展,传统的功率器件封装材料会产生热应力问题、金属间脆性化合物生长问题。低温烧结纳米银具有低温烧结高温服役的特点,还具有优异的导热性能与导电性能,在封装材料方向上具有良好的发展和应用前景。但是,低温烧结纳米银仍然存在烧结致密度低、不能实现大面积封装等问题。文章从目前对烧结技术与烧结材料的研究进行总结和分析,提出了低温烧结纳米银材料和技术的难点,及未来需要继续研究的方向。With the rapid development of the third generation semiconductor devices,the traditional power device packaging materials will produce thermal stress problems and intermetallic brittle compound growth problems.Low-temperature sintered nano-silver has the characteristics of low-temperature sintering and high-temperature service.It also has excellent thermal conductivity and electrical conductivity,and has good development and application prospects in the direction of packaging materials.However,lowtemperature sintered nano-silver still has problems such as low sintering density and inability to achieve large-area packaging.This paper summarizes and analyzes the current research from sintering technology and sintering materials,and puts forward the difficulties of low temperature sintering nano-silver materials and technology and the direction of further research in the future.

关 键 词：纳米银 电子器件封装 低温烧结 

分 类 号：TB331[一般工业技术—材料科学与工程]