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作 者:田安民[1] 孙光淼 卢文兵[1] 张雪珺 TIAN An-min;SUN Guang-miao;LU Wen-bing;ZHANG Xue-jun(NARI Technology Co.,Ltd.,Nanjing 211006,China)
机构地区:[1]国电南瑞科技股份有限公司,江苏南京211006
出 处:《电力电子技术》2023年第10期13-16,38,共5页Power Electronics
基 金:国电南瑞科技股份有限公司科技项目(524608220173)。
摘 要:随着抽蓄机组向着更大系统容量方向的发展,需要大容量的变流器与之配套,大容量变流器对高压、大容量绝缘栅双极型晶体管(IGBT)模块的封装特性和电气性能也提出了更高要求,压接式IGBT具有高功率等级、易于功率阀组的搭建等优点,在大容量变流器中得到了成熟应用。受功率阀组主回路中杂散电感及IGBT反并联二极管浪涌电压的影响,IGBT在关断过程中会产生电压过冲,针对应用于300 MW级变速抽蓄机组的大容量变流器,通过双脉冲和仿真估算变流器功率阀组主回路中的杂散电感,提出了一种综合抑制IGBT关断过电压的方法,并在实际系统上验证了该方法的可行性。With the development of pumped-storage units towards larger system capacity,large-capacity converters are required to match them.Large-capacity converters also put forward higher requirements for the packaging characteristics and electrical performance of high-voltage and large-capacity insulated gate bipolar transistor(IGBT)module,and the press-pack IGBT has the advantages of high power level and easy construction of the power valve groups,and has been maturely applied in large-capacity converters.Affected by the stray inductance in the main circuit of the power valve groups and the surge voltage of the IGBT anti-shunt diode,the IGBT will generate voltage overshoot during the turn-off process.For the large-capacity converter applied to the 300 MW variable-speed pumped-storage unit,the stray inductance in the main circuit of the converter power valve groups is estimated by double-pulse test and simulation model,and a method for comprehensive suppressing the IGBT turn-off overvoltage is proposed,and the feasibility of the method is verified on the actual system.
分 类 号:TN32[电子电信—物理电子学]
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