负载大小对SiC MOSFET开关速度的影响  

Influence of Load on Switching Speed of SiC MOSFET

作　　者：刘勇 肖岚[1] 伍群芳[1] 刘琦 LIU Yong;XIAO Lan;WU Qun-fang;LIU Qi(Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China)

机构地区：[1]南京航空航天大学,自动化学院,江苏南京211106

出　　处：《电力电子技术》2023年第10期133-136,共4页Power Electronics

摘　　要：现有研究多关注驱动电阻、驱动电压、寄生参数等对碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)开关特性的影响,鲜有文献研究负载大小的影响。针对负载大小影响SiC MOSFET开关速度这一现象,建立开关过程模型,结合其转移特性分析此现象产生的原因,仿真和理论分析表明,SiC MOSFET的开通速度随负载增大而降低,关断速度随负载增大而增加。使用SiC功率模块进行双脉冲测试,结果验证了理论分析的正确性。Most of the existing studies focus on the effects of driving resistance,driving voltage,and parasitic parameters on the switching characteristics of silicon carbide(SiC)metal-oxide-semiconductor field-effect transistor(MOSFET),and few articles have studied the effects of load current.To address the phenomenon that load current affects the switching speed of SiC MOSFET,a model of the switching process is established and the causes of this phenomenon are analyzed in conjunction with their transfer characteristics.Simulation and theoretical analysis show that the turn-on speed of SiC MOSFET decreases with increasing load and the turn-off speed increases with increasing load.A doublepulse test is conducted using a silicon carbide power module,and the results verify the correctness of theoretical analysis.

关 键 词：金属氧化物半导体场效应晶体管 开关速度 双脉冲测试 

分 类 号：TN32[电子电信—物理电子学]