应用于5G的新型高线性度功率放大器设计  

Design of novel high linearity power amplifier used in 5G

作　　者：姚凤薇 YAO Fengwei(Shanghai Technology Institute of Electronics&Information,Shanghai 201411,China)

机构地区：[1]上海电子信息职业技术学院,上海201411

出　　处：《现代电子技术》2023年第22期5-8,共4页Modern Electronics Technique

基　　金：上海市自然科学基金项目(17ZR1411100);上海电子信息职业技术学院高层次科研启动资助项目(GCC2023027)。

摘　　要：基于三安公司的2μm GaAs HBT工艺,设计一种工作在5G N78频段的高线性功率放大器。为了解决大信号和高温下功率管静态工作点稳定性差的问题,提出一种在传统电流镜结构中添加分压晶体管、负反馈电阻及镇流电阻的新型有源自适应偏置电路,通过调节阻值大小来调节分压晶体管电压,从而达到减小静态工作点的偏移、提高线性度的目的。此外,在功放的末级匹配中添加多LC串联及TANK结构,既对输出匹配网络进行了优化,又抑制了二、三、四阶高次模频率。结果表明:小信号增益大于31.2 dB;输出功率为20 dBm时,IMD3低于-44.46 dBc;输出功率为27.56 dBm时,相邻信道泄漏比小于-37.62 dBc。所提方法具有良好的线性性能。A high linearity power amplifier operating in the 5G N78 frequency band is designed based on SANAN 2μm GaAs HBT process.In order to solve the problem of poor stability of static working points of power transistors under large signals and high temperatures,a new type of active adaptive bias circuit is proposed by adding a voltage divider transistor,negative feedback resistor,and ballast resistor to the traditional current mirror structure.The voltage of the voltage divider transistor is adjusted by adjusting the resistance value,so as to reduce the deviation of static working points and improve linearity.Multiple LC series and TANK structures are added to the final stage matching of the power amplifier,which not only optimizes the output matching network,but also suppresses the second,third,and fourth order higher-order mode frequencies.The results show that small signal gain greater than 31.2 dB;when the output power is 20 dBm,IMD3 is lower than-44.46 dBc;and when the output power is 27.56 dBm,the adjacent channel leakage ratio is less than-37.62 dBc.It can be seen that the proposed method has good linear performance.

关 键 词：射频功率放大器 高线性度 5G 分压晶体管电压 偏置电路 LC匹配结构 IMD3仿真 ACLR测试 

分 类 号：TN454-34[电子电信—微电子学与固体电子学]