基于相变材料Ge_(2)Sb_(2)Te_(5)的光纤存储器  

Optical Fiber Memory Based on Phase Change Material Ge_(2)Sb_(2)Te_(5)

作　　者：殷嘉悦 程思莹 娄存恺 杨博智 张羽 YIN Jiayue;CHENG Siying;I LOU Cunkai;YANG Bozhi;ZHANG Yu(Key Laboratory of In-Fiber Integrated Optics,Ministry of Education,Harbin Engineering University,Harbin 150001,Heilongjiang,China)

机构地区：[1]哈尔滨工程大学纤维集成光学教育部重点实验室,黑龙江哈尔滨150001

出　　处：《应用科学学报》2023年第5期727-737,共11页Journal of Applied Sciences

基　　金：国家自然科学基金(No.61975039,No.62175046,No.62205086);中国博士后科学基金(No.2022M720940);黑龙江省自然科学基金(No.YQ2020F011)资助。

摘　　要：光纤的典型功能是通信和传感,该文赋予光纤存储的功能,设计了一种全光纤存储器,以满足光纤通信系统智能化发展的需要。利用单模光纤(single-mode fiber, SMF)与多模光纤(multimode fiber, MMF)同轴焊接,并通过磁控溅射方法将Ge_(2)Sb_(2)Te_(5)(GST)材料沉积在MMF端面,端面出射的类贝塞尔光束可以切换GST的相态。MMF的长度影响端面光场,最终选择1.5 mm长的MMF以实现具有任意级别访问能力、高光学对比度、稳定重复性良好的非易失性存储器。该存储器可以实现11级存储,并能够在11个存储等级间进行任意且稳定的切换,光学对比度达到50%,重复循环至少34次。The typical functions of optical fiber are communication and sensing,this pa-per gives the function of optical fiber storage and designs an all-fber memory to meet the needs of intelligent development of optical fiber communication systems.In this paper,single-mode fiber(SMF)and multimode fiber(MMF)are used to coaxial soldering,and Ge_(2)Sb_(2)Te_(5)(GST)material is deposited on the end face of MMF by the magnetron sput-tering method,then the end face will emit the Bessel-like beam that can switch the phase state of GST,the length of MMF affects the end face light field,and finally 1.5 mm long MMF is selected to achieve non-volatile memory with arbitrary level access ability,high optical contrast,good stability,and high repeatability.The memory can realize 11 levels of storage randomly and stably,with an optical contrast of 50%and repeated cycles at least 34 times.

关 键 词：光存储器 光纤 相变材料 类贝塞尔光束 

分 类 号：TN253[电子电信—物理电子学]