倾斜衬底沉积涂层导体MgO缓冲层  

Fabrication of MgO buffer layer for coated conductors by inclined substrate deposition

作　　者：韩超[1] 瞿天睿 高波[1] 郭艳群[1] 蔡传兵[1] Han Chao;Qu Tianrui;Gao Bo;Guo Yanqun;Cai Chuanbing(Department of Physics,Shanghai Key Laboratory of High Temperature Superconductors,Shanghai Frontiers Science Center of Quantum and Superconducting Matter States,Shanghai University,Shanghai 200444,China)

机构地区：[1]上海大学物理系,上海市高温超导重点实验室,上海市量子与超导新物态前沿科学基地,上海200444

出　　处：《低温与超导》2023年第9期14-20,共7页Cryogenics and Superconductivity

基　　金：国家自然科学基金(52172271);中科院先导专项(XDB25000000)资助。

摘　　要：本文通过倾斜衬底沉积技术在Hastelloy基底上成功生长出具有双轴织构的MgO缓冲层。系统研究了衬底倾角分别为30°和55°,薄膜厚度对MgO双轴织构、织构角以及表面形貌的影响。ISD-MgO薄膜最小面内、外半高宽分别为11.0°和6.6°。另外,800℃下,在ISD-MgO上自外延300 nm厚的MgO薄膜可以优化其表面质量,为涂层导体的制备提供高质量缓冲层。In this study,biaxially textured MgO buffer layers for coated conductors were successfully grown on Hastelloy substrates by inclined substrate deposition(ISD).The effects of film thickness on the biaxial texture,texture angle and surface morphology of MgO films were investigated systematically for substrate inclination angles of 30°and 55°,respectively.The least in-plane and out-of-plane full-width-at-half-maximum values of ISD-MgO films are 11.0°and 6.6°respectively.Moreover,the surface quality of ISD-MgO films could be improved by a homoepitaxial deposition of 300 nm thick MgO layer on top of it at 800℃,providing a high-quality buffer layer for the preparation of coated conductors.

关 键 词：倾斜衬底沉积 氧化镁:双轴织构 Epitaxy-MgO(EPI-MgO) 

分 类 号：TQ174[化学工程—陶瓷工业]