氮化镓电源芯片的TF参数测试与可靠性评估  

TF Parameter Test and Reliability Evaluation of GaN Power Chip

作　　者：齐建玲 刘华宇 范凤欢 Qi Jianling;Liu Huayu;Fan Fenghuan(School of Electronic and Control Engineering,North China Institute of Aerospace Engineering,Langfang 065000,China)

机构地区：[1]北华航天工业学院电子与控制工程学院,河北廊坊065000

出　　处：《北华航天工业学院学报》2023年第5期1-3,共3页Journal of North China Institute of Aerospace Engineering

基　　金：河北省专业学位教学案例(库)建设项目(KCJSZ2021103)。

摘　　要：本文详细介绍了氮化镓(GaN)电源芯片漏极下降时间(TF)参数的测试电路和老炼试验电路设计。以纳微(Navitas)半导体公司生产的NV6117电源芯片为例,通过对比NV6117电源芯片老炼试验前后TF参数的变化,对氮化镓电源芯片的可靠性水平进行量化评估,保证了应用电路的可靠性。This article introduces the test circuit and aging test circuit design of GaN power chip drain drop time(TF)parameters.Taking the NV6117 power chip produced by Navitas semiconductor company as an example,by comparing the changes of TF parameters before and after the aging test of NV6117 power chip,the reliability level of GaN power chip is quantitatively evaluated to ensure the reliability of theapplication circuit.

关 键 词：GaN电源芯片 可靠性评估 时间参数测试 NV6117 

分 类 号：TP211[自动化与计算机技术—检测技术与自动化装置]