某型IGBT过流失效分析  

Overcurrent Failure Analysis of IGBT

作　　者：赵骏 苗峰[1] 杨也 ZHAO Jun;MIAO Feng;YANG Ye(Key Laboratory of Electronic and Information Engineering(Southwest Minzu University),State Ethnic Affairs Commission,Chengdu 610041,China)

机构地区：[1]电子信息工程(西南民族大学)国家民委重点实验室,成都610041

出　　处：《电子工艺技术》2023年第6期4-6,20,共4页Electronics Process Technology

摘　　要：某型逆变器驱动电路中的绝缘栅双极型晶体管(IGBT)模块使用中频繁出现短路失效现象,为了分析失效原因,对现场取回的典型IGBT失效件进行电学性能、X-ray测试、显微镜测试,扫描电子显微镜及能谱测试分析。根据故障树及失效模式理论确定该IGBT失效件的一级失效模式是过流失效,二级失效模式是电路中出现的过载脉冲电流引起的过流失效,三级失效模式是设备使用过程中,超负荷运转导致的逆频器过载。The IGBT module in the drive circuit of a type of inverter was frequently failed with short circuit in use.In order to analyze the causes of failure,the typical IGBT failure part is retrieved from the site to analyze by electrical performance,X-ray test,microscope test,scanning electron microscope test and energy spectrum test.According to the fault tree and failure mode theory,the primary failure mode of this IGBT failure part is overcurrent failure,the secondary failure mode is an overcurrent failure caused by overload pulse current in the circuit,and the tertiary failure mode is an overload of the inverse frequency converter caused by overload operation during the use of the equipment.

关 键 词：IGBT 失效分析 过流失效 过压失效 

分 类 号：TN32[电子电信—物理电子学]