High responsivity and fast response 8×8β-Ga_(2)O_(3)solar-blind ultraviolet imaging photodetector array  

作　　者：SHEN GaoHui LIU Zeng TANG Kai SHA ShuLin LI Lei TAN Chee-Keong GUO YuFeng TANG WeiHua 

机构地区：[1]Innovation Center of Gallium Oxide Semiconductor(IC-GAO),College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China [2]National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies,Nanjing University of Posts and Telecommunications,Nanjing 210023,China [3]Key Laboratory of Aerospace Information Materials and Physics(NUAA),MIIT,Nanjing 211106,China [4]College of Physics,MIIT Key Laboratory of Aerospace Information Materials and Physics,Key Laboratory for Intelligent Nano Materials and Devices,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China [5]Advanced Materials Thrust,Function Hub,The Hong Kong University of Science and Technology(Guangzhou),Nansha 511458,China [6]Department of Electronic and Computer Engineering,School of Engineering,The Hong Kong University of Science and Technology,Hong Kong 999077,China

出　　处：《Science China(Technological Sciences)》2023年第11期3259-3266,共8页中国科学（技术科学英文版）

基　　金：supported by the National Key R&D Program of China(Grant No.2022YFB3605404);the National Natural Science Foundation of China(Grant No.62204125);the Open Fund of Key Laboratory of Aerospace Information Materials and Physics(NUAA)MIIT;the Natural Science Research Start-up Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications(Grant Nos.XK1060921115;XK1060921002)。

摘　　要：In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing application.The 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor deposition technique;and the photodetector array was fabricated through ultraviolet photolithography,lift-off,and electron-beam evaporation.In addition to the high solar-blind/visible rejection ratio of 104,every photodetector cell in the array has high performance and fast response speed,such as responsivity of 49.4 A W^(-1),specific detectivity of 6.8×10^(14)Jones,external quantum efficiency of 1.9×10^(4)%,linear dynamic range of 117.8 d B,and response time of 41 ms,respectively,indicating the high photo-response performance of the photodetector.Moreover,the photodetector array displayed uniform responsivity with a standard deviation of~6%,and presented a sensing image of low chromatic aberration,owing to the high resolution of the photodetector array.In a word,this work may contribute to developing Ga_(2)O_(3)-based optoelectronic device applications.

关 键 词：Ga_(2)O_(3) photodetector array imaging photo-response 

分 类 号：TN23[电子电信—物理电子学]