Area-Specific Positioning of Metallic Glass Nanowires on Si Substrate  

作　　者：Sumanth Theeda Golden Kumar 

机构地区：[1]Department of Mechanical Engineering,The University of Texas at Dallas,Richardson,USA

出　　处：《Nanomanufacturing and Metrology》2023年第3期60-68,共9页纳米制造与计量（英文）

基　　金：The authors would like to thank the financial support from National Science Foundation(NSF)through CMMI CAREER Award#1921435.

摘　　要：This paper presents a novel technique to fabricate metallic nanowires in selective areas on a Si substrate.Thermoplastic drawing of viscous metallic glass from cavities etched in Si can produce metallic nanowires.The length and diameter of nanowires can be controlled by adjusting the drawing conditions without changing the Si mold.A thin metal shadow mask is stacked above the Si mold during thermoplastic drawing to fabricate the nanowires only in specific locations.The mask restricts the flow of metallic glass to predefined shapes on the mask,resulting in the formation of nanowires in selected areas on Si.An Al foil-based mask made by a benchtop vinyl cutter is used to demonstrate the proof-of-concept.Even a simple Al foil mask enables the positioning of metallic nanowires in selective areas as small as 200μm on Si.The precision of the vinyl cutter limits the smallest dimensions of the patterned areas,which can be further improved by using laser-fabricated stencil masks.Results show that a single row of metallic glass nanowires can be patterned on Si using selective thermoplastic drawing.Controllable positioning of metallic nanowires on substrates can enable new applications and characterization techniques for nanostructures.

关 键 词：NANOWIRES Selective area nanopatterning Metallic glass Thermoplastic forming 

分 类 号：TB383[一般工业技术—材料科学与工程]