杂质钽对真空电子束蒸镀铝膜的影响研究  

Study on Influence of Tantalum Impurity on Aluminium Film Prepared by Vacuum Electron Beam Evaporation

作　　者：刘欢[1] 马贤 卢肖勇 王丁丁[1] 张晓卫[1] 罗立平[1] LIU Huan;MA Xian;LU Xiao-yong;WANG Ding-ding;ZHANG Xiao-wei;LUO Li-ping(Research Institute of Physical and Chemical Engineering of Nuclear Industry,Tianjin 300180,China)

机构地区：[1]核工业理化工程研究院,天津300180

出　　处：《稀有金属与硬质合金》2023年第5期65-72,共8页Rare Metals and Cemented Carbides

摘　　要：采用电子枪对含钽杂质的铝锭进行真空电子束蒸镀,随着温度升高铝锭形成熔池和铝蒸气。利用电感耦合等离子体发射光谱仪(ICP-OES)检测铝锭不同区域的钽含量;利用扫描电子显微镜(SEM)、能谱仪(EDS)和X射线衍射仪(XRD)研究铝锭和蒸镀铝膜的微观组织、化学成分和物相结构;通过俄歇电子能谱仪(AES)和X射线光谱仪(XPS)分别分析铝锭和铝膜中元素形态和组成形式。结果表明,随着钽含量增加,铝熔池蒸发速率显著提升,当钽含量为41.39%时,其蒸发速率约为不含钽熔池的7.5倍。在蒸镀过程中,钽主要集中在熔池中下部,金属蒸气中不含钽。钽在熔池中主要以Al3Ta形式存在,并存在少量纯钽。Aluminum ingots containing tantalum impurity underwent vacuum electron beam evaporation using a electron gun,resulting in the formation of a molten pool and aluminum vapor with increasing temperature.The tantalum content in different regions of the aluminum ingot was detected by inductively coupled plasma emission spectrometer(ICP-OES).The microstructure,chemical composition and phase composition of the aluminum ingot and evaporated aluminum film were investigated by scanning electron microscope(SEM),energy dispersive spectroscope(EDS)and X-ray diffractometer(XRD).The element speciation and composition of the aluminum ingot and aluminum film were analyzed using Auger electron spectrometer(AES)and X-ray photoelectron spectroscope(XPS),respectively.The results show that with the increase in tantalum content,the evaporation rate of the aluminum molten pool significantly increases.When the tantalum content is 41.39%,the evaporation rate is approximately 7.5 times that of the tantalum-free molten pool.During the evaporation process,tantalum is mainly concentrated in the middle and lower part of the molten pool,and the metal vapor does not contain tantalum.In the molten pool,tantalum primarily exists in the form of Al_3Ta with the existence of a small amount of pure tantalum.

关 键 词：真空电子束蒸镀 铝锭 钽 熔池 铝膜 蒸发速率 成分分布 

分 类 号：TN305.8[电子电信—物理电子学]