Ambipolar Doping of Monolayer FeSe by Interface Engineering  

作　　者：程方君 张一民 范嘉琪 宋灿立 马旭村 薛其坤 Fang-Jun Cheng;Yi-Min Zhang;Jia-Qi Fan;Can-Li Song;Xu-Cun Ma;Qi-Kun Xue(State Key Laboratory of Low-Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China;Frontier Science Center for Quantum Information,Beijing 100084,China;Beijing Academy of Quantum Information Sciences,Beijing 100193,China;Southern University of Science and Technology,Shenzhen 518055,China)

机构地区：[1]State Key Laboratory of Low-Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China [2]Frontier Science Center for Quantum Information,Beijing 100084,China [3]Beijing Academy of Quantum Information Sciences,Beijing 100193,China [4]Southern University of Science and Technology,Shenzhen 518055,China

出　　处：《Chinese Physics Letters》2023年第8期58-62,共5页中国物理快报（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(Grant No.12141403);the National Key R&D Program of China(Grant No.2022YFA1403100)。

摘　　要：We report on ambipolar modulation doping of monolayer FeSe epitaxial films grown by molecular beam epitaxy and in situ spectroscopic measurements via a cryogenic scanning tunneling microscopy.It is found that hole doping kills superconductivity in monolayer FeSe films on metallic Ir(001)substrates,whereas electron doping from polycrystalline IrO_(2)/SrTiO_(3)substrate enhances significantly the superconductivity with an energy gap of 10.3 meV.By exploring substrate-dependent superconductivity,we elucidate the essential impact of substrate work functions on the superconductivity of monolayer FeSe films.Our results therefore offer a valuable reference guide for further enhancement of the transition temperature Tc in FeSe-based superconductors by interface engineering.

关 键 词：SUPERCONDUCTIVITY DOPING MONOLAYER 

分 类 号：TB383.2[一般工业技术—材料科学与工程] O511[理学—低温物理]