氮化镓基Micro-LED侧壁对外量子效率的影响及侧壁处理技术综述  

A review of the effect of GaN-Based Micro-LED sidewall on external quantum efficiency and sidewall treatment techniques

作　　者：邝海[1] 黄振[1] 熊志华[1] 刘丽[1] KUANG Hai;HUANG Zhen;XIONG Zhi-hua;LIU Li(Key Laboratory for Optoelectronics and Communication of Jiangxi Province,Jiangxi Science Technology Normal University,Nanchang 330038,China)

机构地区：[1]江西科技师范大学江西省光电子与通信重点实验室,江西南昌330038

出　　处：《中国光学（中英文）》2023年第6期1305-1317,共13页Chinese Optics

基　　金：江西省教育厅科学技术研究项目(No.GJJ2201338);国家自然科学基金(No.12364013);江西科技师范大学博士科研启动基金项目(No.2019BSQD020);中央引导地方科技发展资金项目(No.2022ZDD03088)。

摘　　要：氮化镓基Micro-LED具备高亮度、高响应频率、低功耗等优点,是未来显示技术和可见光通信系统的理想选择,但是目前外量子效率(EQE)低下这一问题严重影响其规模化量产及进一步应用。为了突破EQE低下这一瓶颈,通过分析Micro-LED外量子效率的影响因素,得知EQE下降的主要原因包括侧壁缺陷引起的载流子损耗及非辐射复合。总结了侧壁缺陷对载流子输运及复合的影响。综述了目前常用的侧壁处理技术及修复方法,指出现有侧壁处理方法较为笼统、针对性不足且载流子与侧壁缺陷的作用机理并不十分清楚。提出应深入系统地研究侧壁缺陷种类和分布、载流子与侧壁缺陷作用机制及侧壁处理过程中的缺陷修复模式。本文为提高外量子效率、加快Micro-LED商业化量产进程提供设计思路和理论依据。Micro-LEDs offers the benefits of high brightness,high response frequency,and low power consumption,making them an attractive candidate for future display technologies and Visible Light Communication(VLC)systems.Nonetheless,their low External Quantum Efficiency(EQE)currently impedes their scaled mass production and further applications.In order to break through the bottleneck of low EQE,we conducted an analysis of Micro-LED external quantum efficiency’s contributing factors.The influencing factors for EQE are analyzed.It is concluded that the carrier loss and non-radiative recombination caused by sidewall defects are the main reasons for the decrease in EQE.In addition,we summarized the impact of sidewall defects on carrier transport and composites,and we also reviewed the commonly used sidewall treatment technology and repair methods,and pointed out that the existing sidewall treatment methods are helpful but insufficient for improving EQE,and the mechanism of carrier interaction with sidewall defects is not very clear.It is suggested to carry out a thorough and systematic study on the types and distribution of sidewall defects,the mechanism of carrier and sidewall defects,and the defect repair mode in the sidewall treatment process.Finally,future development trends are projected.This paper offers design ideas and theoretical foundations to enhance the external quantum efficiency and accelerate the process of commercialization and mass production of Micro-LEDs.

关 键 词：侧壁缺陷 微发光二极管 外量子效率 载流子 侧壁钝化 

分 类 号：TN312[电子电信—物理电子学]