三氯氢硅合成湿法除尘系统的优化  

Optimization of Wet Dedusting System for Trichlorosilane Synthesis

作　　者：李兵 明勇 晏涛 LI Bing;MING Yong;YAN Tao(Sichuan Yongxiang New Energy Co.,Ltd.,Leshan 614800,China)

机构地区：[1]四川永祥新能源有限公司,四川乐山614800

出　　处：《化工技术与开发》2023年第11期92-95,共4页Technology & Development of Chemical Industry

摘　　要：采用Aspen Plus流程模拟软件,对三氯氢硅的合成工艺进行了流程模拟与优化,主要考察了洗涤塔的塔盘数量、喷淋量、排渣量、工艺气体进口温度等因素,对三氯氢硅合成洗涤塔的洗涤效果的影响。以三氯氢硅合成装置冷氢化外排的废硅粉为原料,与氯化氢在三氯氢硅合成炉内进行反应生成氯硅烷,工艺气体的进口温度为300℃。为确保产品液中的金属杂质含量低于10ppbw,洗涤塔的塔盘数量≥5块,最佳喷淋量为3700kg·h^(-1),最佳排渣量为190kg·h^(-1)。工艺气体的进口温度与喷淋量的关系可用关系式y=13.26x-313.33表示。Aspen Plus software was used to simulate the chemical process of trichlorosilane synthesis.The influence of the number of tray,amount of slag,process gas temperature,spraying quantity on the washing efficiency of wet dedusting system was investigated.The waste silicon powder of cold hydrogenation was used as raw material and react with hydrogen chloride in the trichlorosilane synthesis furnace to produce chlorosilane with the process gas inlet temperature was 300℃.In ensure that the metal impurity content of the product liquid was less than 10ppbw,the number of washing tower trays should be≥5,with an optimal spray rate of 3700kg/h and an optimal slag discharge rate of 190kg/h.The relationship between process gas inlet temperature and spray volume could be expressed by the equation y=13.26x-313.33.

关 键 词：三氯氢硅合成 湿法除尘 金属杂质 流程模拟 

分 类 号：TQ264.1[化学工程—有机化工]