一种低功耗高阶补偿带隙基准电压源  

A Low Pouer High Order Temperature-compensated CMOS Bandgap Reference

作　　者：王华杰 聂海[1] WANG Huajie;NIE Hai(College of Communication Engineering,Chengdu University of Information Technology,Chengdu 610225,China)

机构地区：[1]成都信息工程大学通信工程学院,四川成都610225

出　　处：《成都信息工程大学学报》2023年第5期516-520,共5页Journal of Chengdu University of Information Technology

基　　金：四川省科技计划资助项目(2022YFG0003)。

摘　　要：研究一种高精度CMOS带隙基准电压源(BGR)电路,BGR电路由两个核心和一个曲率校正电路组成,包括电流镜和求和电路。两个核心电路采用传统电路结构,并具有向下的曲率特性。提出一种利用电流镜像电路来实现具有向上曲率特性的BGR核心。在BGR中选择合适的电阻,可以得到一个参考电压具有良好平衡的曲率下降特性,而另一个参考电压具有均匀平衡向上的曲率特性。将两个参考电压的相加以实现高阶曲率补偿。在3.3 V电源电压供电情况下,采用0.13μm CMOS工艺可以产生1.2 V的基准电压,在200℃(-45℃~155℃)的宽温度范围内,使所提出的BGR电路的温度系数低至1.45 ppm/℃。电源抑制比为-67.5 dB@100 Hz、-45.0 dB@100 KHz,消耗电流为911 nA。This paper designs a high precision CMOS bandgap reference voltage source(BGR)circuit.The BGR circuit consists of two cores and a curvature correction circuit,including a current mirror and a summation circuit.The two core circuits adopt conventional circuit structure and have downward curvature characteristics.This paper proposes a current mirror circuit to implement a BGR core with upward curvature.By choosing the appropriate resistance in the BGR,one reference voltage has a well-balanced curvature descent characteristic,while the other reference voltage has a uniformly balanced curvature upward characteristic,and the two reference voltages are combined to realize higher order curvature compensation.In the case of 3.3 V supply voltage,the reference voltage of 1.2V can be generated by CMOS process,and the temperature coefficient of the proposed BGR circuit can be as low as 1.45ppm/℃in the wide temperature range of 200℃(-45℃-155℃).The power supply rejection ratio is-67.5 dB@100 Hz,-45.0 dB@100 KHz,and the consumption current is 911 nA.

关 键 词：带隙基准 曲率补偿 电源抑制比 温度系数 

分 类 号：TN432[电子电信—微电子学与固体电子学]