A fast-response self-powered UV–Vis–NIR broadband photodetector based on a AgIn_(5)Se_(8)/t-Se heterojunction  

作　　者：李康 许磊 陆启东 胡鹏 Kang Li;Lei Xu;Qidong Lu;Peng Hu(School of Physics,Northwest University,Xi’an 710127,China)

机构地区：[1]School of Physics,Northwest University,Xi’an 710127,China

出　　处：《Chinese Physics B》2023年第11期134-139,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 51803168);the Key Research and Development Program of Shaanxi Province (Grant No. 2022GY-356);the Youth Innovation Team of Shaanxi Universities。

摘　　要：A type Ⅱ p–n heterojunction could improve the photodetection performance of a photodetector due to the excellent ability of carrier separation. N-type AgIn_(5)Se_(8)(AIS) exhibits a large optical absorption coefficient, high optical conductivity and a suitable bandgap, and shows potential application in broadband photodetection. Even though our previous study on AgIn_(5)Se_(8)/FePSe_(3)obtained a good response speed, it still gave low responsivity due to the poor quality of the p-type FePSe_(3)thin film. Se, with a direct bandgap(around 1.7 eV), p-type conductivity, high electron mobility and high carrier density,is likely to form a low-dimensional structure, which leads to an increase in the effective contact area of the heterojunction and further improves the photodetector performance. In this work, continuous and dense t-Se thin film was prepared by electrochemical deposition. The self-powered AgIn5Se8/t-Se heterojunction photodetector exhibited a broadband detection range from 365 nm to 1200 nm. The responsivity and detectivity of the heterojunction photodetector were 32 μA/W and 1.8×109Jones, respectively, which are around 9 and 4 times higher than those of the AgIn_(5)Se_(8)/FePSe_(3)heterojunction photodetector. The main reason for this is the good quality of the t-Se thin film and the formation of the low-dimensional t-Se nanoribbons, which optimized the transport pathway of carriers. The results indicate that the AgIn_(5)Se_(8)/t-Se heterojunction is an excellent candidate for broadband and self-powered photoelectronic devices.

关 键 词：AgIns Seg/t-Se heterojunction self-power broadband photodetector 

分 类 号：TN15[电子电信—物理电子学]