Low-damage photolithography for magnetically doped(Bi,Sb)_(2)Te_(3) quantum anomalous Hall thin films  

作　　者：高志廷 郭明华 连梓臣 李耀鑫 白云鹤 冯硝 何珂 王亚愚 刘畅 张金松 Zhiting Gao;Minghua Guo;Zichen Lian;Yaoxin Li;Yunhe Bai;Xiao Feng;Ke He;Yayu Wang;Chang Liu;Jinsong Zhang(State Key Laboratory of Low Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China;Beijing Academy of Quantum Information Sciences,Beijing 100193,China;School of Integrated Circuits,Tsinghua University,Beijing 100084,China;Frontier Science Center for Quantum Information,Beijing 100084,China;Hefei National Laboratory,Hefei 230088,China;Beijing Key Laboratory of Opto-electronic Functional Materials&Micro-Nano Devices,Department of Physics,Renmin University of China,Beijing 100872,China;Key Laboratory of Quantum State Construction and Manipulation(Ministry of Education),Renmin University of China,Beijing 100872,China)

机构地区：[1]State Key Laboratory of Low Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China [2]Beijing Academy of Quantum Information Sciences,Beijing 100193,China [3]School of Integrated Circuits,Tsinghua University,Beijing 100084,China [4]Frontier Science Center for Quantum Information,Beijing 100084,China [5]Hefei National Laboratory,Hefei 230088,China [6]Beijing Key Laboratory of Opto-electronic Functional Materials&Micro-Nano Devices,Department of Physics,Renmin University of China,Beijing 100872,China [7]Key Laboratory of Quantum State Construction and Manipulation(Ministry of Education),Renmin University of China,Beijing 100872,China

出　　处：《Chinese Physics B》2023年第11期257-262,共6页中国物理B（英文版）

基　　金：supported by the National Key Research and Development Program of China (Grant No. 2018YFA0307100);the Basic Science Center Project of the National Natural Science Foundation of China (Grant No. 52388201);the National Natural Science Foundation of China (Grant Nos. 12274453 and 92065206);the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302502);supported by Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (Grant No. KF202204);supported by the New Cornerstone Science Foundation through the New Cornerstone Investigator Program;the XPLORER PRIZE。

摘　　要：We have developed a low-damage photolithography method for magnetically doped(Bi,Sb)_(2)Te_(3)quantum anomalous Hall(QAH) thin films incorporating an additional resist layer of poly(methyl methacrylate)(PMMA). By performing control experiments on the transport properties of five devices at varied gate voltages(V_(g)s), we revealed that the modified photolithography method enables fabricating QAH devices with the transport and magnetic properties unaffected by fabrication process. Our experiment represents a step towards the production of novel micro-structured electronic devices based on the dissipationless QAH chiral edge states.

关 键 词：topological insulator quantum anomalous Hall effect fabrication techniques 

分 类 号：O469[理学—凝聚态物理]