Simulation of optical and electrical synaptic functions in MoS_(2)/α-In_(2)Se_(3) heterojunction memtransistors  

作　　者：相韬 陈凤翔 李晓莉 王小东 闫誉玲 汪礼胜 Tao Xiang;Fengxiang Chen;Xiaoli Li;Xiaodong Wang;Yuling Yan;Lisheng Wang(Department of Physics Science and Technology,School of Science,Wuhan University of Technology,Wuhan 430070,China)

机构地区：[1]Department of Physics Science and Technology,School of Science,Wuhan University of Technology,Wuhan 430070,China

出　　处：《Chinese Physics B》2023年第11期562-569,共8页中国物理B(英文版)

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 51702245)。

摘　　要：Memtransistors combine memristors and field-effect transistors, which can introduce multi-port control and have significant applications for enriching storage methods. In this paper, multilayer α-In2Se3and MoS2were transferred to the substrate by the mechanical exfoliation method, then a heterojunction MoS_(2)/α-In_(2)Se_(3) memtransistor was prepared. Neural synaptic simulations were performed using electrical and optical pulses as input signals. Through measurements, such as excitatory/inhibitory post-synaptic current(EPSC/IPSC), long-term potentiation/depression(LTP/LTD), and paired-pulse facilitation/depression(PPF/PPD), it can be found that the fabricated device could simulate various functions of neural synapses well, and could work as an electronic synapse in artificial neural networks, proposing a possible solution for neuromorphic storage and computation.

关 键 词：α-In_(2)Se_(3) MoS_(2) dual-gate control by electric and light neural synaptic function simulation 

分 类 号：TN60[电子电信—电路与系统] TN386