Effects of oxygen/nitrogen co-incorporation on regulation of growth and properties of boron-doped diamond films  

作　　者：刘东阳 汤琨 朱顺明 张荣 郑有炓 顾书林 Dong-Yang Liu;Kun Tang;Shun-Ming Zhu;Rong Zhang;You-Dou Zheng;Shu-Lin Gu(School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;The Shanghai Huahong Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China;Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics,Nanjing University,Nanjing 210093,China)

机构地区：[1]School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China [2]The Shanghai Huahong Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China [3]Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics,Nanjing University,Nanjing 210093,China

出　　处：《Chinese Physics B》2023年第11期609-615,共7页中国物理B(英文版)

基　　金：Project supported by the National Key R&D Program of China (Grant Nos. 2018YFB0406502, 2017YFF0210800, and 2017YFB0403003);the National Natural Science Foundation of China (Grant Nos. 61974059, 61674077, and 61774081);the Natural Science Foundation of Jiangsu Province (Grant No. BK20160065);the Fundamental Research Funds for the Central Universities。

摘　　要：Regulation with nitrogen and oxygen co-doping on growth and properties of boron doped diamond films is studied by using laughing gas as dopant. As the concentration of laughing gas(N2O/C) increases from 0 to 10%, the growth rate of diamond film decreases gradually, and the nitrogen-vacancy(NV) center luminescence intensity increases first and then weakens. The results show that oxygen in laughing gas has a strong inhibitory effect on formation of NV centers, and the inhibitory effect would be stronger as the concentration of laughing gas increases. As a result, the film growth rate and nitrogen-related compensation donor decrease, beneficial to increase the acceptor concentration(~3.2×10^(19)cm^(-3)) in the film. Moreover, it is found that the optimal regulation with the quality and electrical properties of boron doped diamond films could be realized by adding appropriate laughing gas, especially the hole mobility(~700cm^(2)/V·s), which is beneficial to the realization of high-quality boron doped diamond films and high-level optoelectronic device applications in the future.

关 键 词：boron doped diamond nitrogen and oxygen co-doping crystal quality Hall effect measurement acceptor doping concentration 

分 类 号：TB383.2[一般工业技术—材料科学与工程]