上波导层In摩尔分数对InGaN基蓝光激光器性能研究  

Effect of In Mole Fraction in Upper Waveguide Layer on Performance of InGaN-Based Blue Lasers

作　　者：付星瑞 李书平 Fu Xingrui;Li Shuping(College of Physical Science and Technology,Xiamen University,Xiamen 361005,Fujian,China)

机构地区：[1]厦门大学物理科学与技术学院,福建厦门361005

出　　处：《光学学报》2023年第20期177-184,共8页Acta Optica Sinica

摘　　要：基于实验样品结构,利用PICS3D模拟软件,构建了具有同样结构的InGaN基蓝光激光器,并采取了与实验样品一致的内部参数测定方式,结果表明,内部损耗相对误差为3.5%,实现了严格的比对。随后,构建了一系列InGaN基蓝光激光器,通过比较不同In摩尔分数下的光输出功率、载流子分布、光场分布、辐射复合系数和能带曲线等参数,对上波导层中的In摩尔分数进行优化研究。设计得到了光功率更优的两种不同的优化结构,均有效减少了电子泄漏,提高了斜率效率,从而有效提高了光电转化效率,其中渐变In摩尔分数上波导层结构提升效果更为显著。Objective To constantly improve performance requirements for InGaN lasers,we investigate the effect of the In mole fractionin the upper waveguide layer on the performance of InGaN-based blue laser diodes.The research results can be employed to improve the performance of InGaN-based blue laser diodes which have many potential applications in areas such as solid-state lighting,laser displays,and optical storage.Our study is motivated by electron leakage limiting the output power of laser diodes.Due to mobility differences,the injection rate of holes will be slower than that of electrons to bring about varying amounts of hole injection in several quantum wells,which makes electrons leak into the waveguide layer and reduces the carrier density in the active layer.Additionally,the polarization effect of InGaN materials will lead to energy band offset and quantum confinement Stark effect.To this end,many optimization ideas have been proposed,but most of them focus on multiple quantum wells and barriers,lower waveguide layers,and electron barrier layers.Our study shows that the upper waveguide layer also plays a crucial role in the performance of InGaN-based blue laser diodes.By adjusting the In mole fraction of the upper waveguide layer,the corresponding band structure can be changed to alleviate the electron current overflowing from the quantum well,thereby improving the radiation recombination rate and optical output.Methods Based on the experimental sample structure,an InGaN-based blue laser with the same structure is constructed by PICS3D simulation software.Its photoelectric performance,such as the optical power curve,voltammetry curve,and spectral peak curve,achieves strict comparison.The internal parameters are measured in a manner consistent with the experimental sample.In the reference,the reflectivity of the front cavity surface is modified to 10%,45%,and 82%in turn,and different slope efficiencies are obtained.The internal loss and carrier injection rate of the laser are indirectly measured by linear fitting

关 键 词：二极管激光器 上波导层 渐变层 电子泄漏 

分 类 号：TN248[电子电信—物理电子学]