复合电子阻挡层优化InGaN基紫色激光器光电性能  

Optoelectronic Performance Optimization of InGaN-Based Violet Laser Diodes by Composite Electron Blocking Layers

作　　者：谈奇灵 李书平 Tan Qiling;Li Shuping(College of Physical Science and Technology,Xiamen University,Xiamen 361005,Fujian,China)

机构地区：[1]厦门大学物理科学与技术学院,福建厦门361005

出　　处：《光学学报》2023年第20期185-194,共10页Acta Optica Sinica

基　　金：国家重点研发计划(2016YFB0400801,2016YFB0400800)。

摘　　要：基于实验样品,利用PICS3D模拟软件分析电子阻挡层对激光器性能的影响,尤其是对电光转换效率的影响。通过在上波导层和电子阻挡层之间插入一层AlGaN层,调整插入层和原始电子阻挡层的Al原子数分数和厚度,形成复合电子阻挡层,设计了一系列InGaN基紫色激光器,并模拟比较它们的电流-电压特性曲线、发光功率、电光转换效率、能带分布和载流子分布等特性。结果表明,采用插入层的Al原子数分数和厚度分别为0.30和15 nm、原始电子阻挡层的Al原子数分数和厚度为0.24~0.06和5 nm的新复合结构电子阻挡层,可以调整能带结构、抑制电子泄漏、增加空穴注入,从而提高辐射复合率、增大激光器电光转换效率。相较于参考结构,新结构的电光转换效率提升了36.9%。Objective Compared with other types of laser diodes,semiconductor laser diodes have excellent properties such as high optical power,high efficiency,low cost,and good laser quality.Thus,laser diodes,especially those with short excitation wavelengths,have important and wide applications in solid-state illumination,high-density optical storage,radio-optical communication,biomedical technology,and chemical analysis.To continuously meet the increasing performance requirements of InGaN-based violet laser diodes in the above fields,we select an experimental sample from the reference as reference structures and theoretically investigate the effect of structural changes in the laser diodes on their optoelectronic performance.Meanwhile,we are motivated by the current problems in the actual growth epitaxy process and operation of violet laser diodes that hinder the performance enhancement,such as difficulties in p-type doped epitaxial growth,lattice mismatch,polarization of the GaN material,and electron leakage.Typically,the mobility of electrons in semiconductors is higher than the mobility of holes,resulting in electron leakage from the active region.This is the region where the radiative composite of electrons and holes is supposed to occur,to the p-cladding layer where holes inject,and non-radiative composite with holes occurs therein,which significantly reduces the carrier radiative composite rate.Additionally,the polarization effect of the GaN material results in a shift in the internal energy band structure of the laser diodes and also reduces the optoelectronic performance.Thus,many researchers have proposed a number of optimization schemes to reduce electron leakage and minimize the influence of the polarization effect,and most of the schemes are the growth optimization in the actual epitaxy process and the structure optimization of the waveguide layer and active region in the laser diodes.We conclude that by directly modifying the structure of the electron blocking layer(EBL)such as thickness and contents,the ener

关 键 词：激光器 电子阻挡层 插入层 电光转换效率 

分 类 号：TN248[电子电信—物理电子学]