Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs  

作　　者：Horacio Soto-Ortiz Gerson Torres-Miranda 

机构地区：[1]Applied Physics Division,Center for Scientific Research and Higher Education of Ensenada

出　　处：《Chinese Optics Letters》2023年第9期107-112,共6页中国光学快报（英文版）

基　　金：supported by the Mexican Council of Science and Technology (CONACYT) (Nos.SEPCONACYTCB-2016-01-285030 and 804835)。

摘　　要：Here,we present a study of the effective piezoelectric constant(e_(14_(e)))temperature dependence in strained[111]-oriented zinc-blende quantum wells(QWs)embedded within a semiconductor optical amplifier(SOA).We determined e_(14_(e)) using a method that was insensitive to the segregation phenomenon and to the temperature dependence of the bandgap energy,which required neither fitting parameters nor temperature-dependent expressions for energy and out-of-plane effective masses of electrons and heavy holes.An e_(14_(e))=−0.0534±0.0040 C·m^(−2) at 23°C was obtained for an SOA with 1.2 nm[111]-oriented strained In0.687Ga0.313As/In0.807Ga0.193As0.304P0.696 QWs.Unlike previously published research,where e_(14_(e)) magnitude increased as temperature rised,we extracted an e_(14_(e)) magnitude that decreased as temperature increased.

关 键 词：piezoelectric constant pyroelectric effect quantum-confined Stark effect EXCITONS semiconductor optical amplifiers ZINC-BLENDE quantum wells 

分 类 号：TN722[电子电信—电路与系统] O413[理学—理论物理]