固结磨料切割Φ200 mm硅单晶表面损伤研究  

Surface Damage of Φ200 mm Silicon Ingot by Fixed Abrasive Diamond Wire Sawing

作　　者：苏冰 周旗钢 邢旭 李军 李军营 周波 Su Bing;Zhou Qigang;Xing Xu;Li Jun;Li Junying;Zhou Bo(National Engineering Research Center for Integrated Circuit Key Materials,China GRINM Group Co.,Ltd.,Beijing 100088,China;Shandong GRINM Semiconductor Materials Co.,Ltd.,Dezhou 253000,China;Qingdao Gaoce Technology Co.,Ltd.,Qingdao 266114,China)

机构地区：[1]中国有研科技集团有限公司集成电路关键材料国家工程研究中心,北京100088 [2]山东有研半导体材料有限公司,山东德州253000 [3]青岛高测科技股份有限公司,山东青岛266114

出　　处：《稀有金属》2023年第8期1186-1194,共9页Chinese Journal of Rare Metals

基　　金：国家重点研发计划项目(2017YFB0305603)资助。

摘　　要：研究电镀刚石线在多线切割过程中对半导体硅材料的去除机制与表面损伤情况,在不同的钢线速度下对Φ200 mm硅单晶进行切割实验,并对切割的试样与切屑进行扫描电镜(SEM)测试,观察试样的表面形貌和切屑的形貌,分析半导体硅材料的去除机制与硅片表面不同位置的粗糙度及损伤深度。结果表明:电镀金刚石线切割硅晶体时,线速度越高,进给速度越小,硅晶体材料越容易以塑性方式加工;固结磨料切割后的硅片表面,沿着工作台进给方向,表面粗糙度先增大再减小,硅片中间位置粗糙度最大。钢线入线位置的损伤层最深,且随着切割深度的增加,表面损伤层深度逐渐减小;沿着钢线往复运动的方向,两侧边缘位置粗糙度比中间小,钢线前进侧损伤层深度比回线侧深;进给速度一定时,硅片相同位置表面损伤层深度随着钢线速度的减小而增大。切割后的硅片表面由于局部切削热应力分布不均匀导致有微裂纹产生,相同进给速度时,线速度越高,切割后硅片相同位置表面微裂纹越窄,反之表面微裂纹越宽。Slicing silicon ingots into silicon wafer is a crucial step in semiconductor industries.There are different wire sawing technologies available,either with fixed abrasives(diamonds on wire)or loose abrasives dispersed in a slurry.The multi-wire slurry sawing and muti-wire diamond wire sawing are widely applied for slicing brittle-hard materials,such as sapphire crystal,crystalline silicon,SiC and optical glass.As a major cutting technique,diamond wire sawing(DWS)has already completely replaced the multi-wire slurry sawing(MWSS)in solar cell wafer production.With the technology improving,most ofΦ150 mm silicon ingots have used DWS slicing during the semiconductor wafers produced due to its high efficiency and less waste,the use of simple water-based cooling fluid also makes the process more environmentally friendly compared to loose abrasive sawing technology.The wafer area is steadily increase in order to raise the yield of devices per wafer,in response to requirements for greater chip sizes and cost-cutting measures.The major wafer inch of semiconductor industries isΦ200 andΦ300 mm.With the diameter increasing,cutting time dramatic prolongs,DWS is the direction to solve this question.Unlike the MWSS process,DWS is preformed through a two-body wear mechanism through the interaction of the bonded diamonds on the abrasive wire with the workpiece.The microcracks in the subsurface region can duce the failure of semiconductor components and improve the cost of subsequent process such as the lapping and polishing.In order to contribute to the fixed abrasive diamond wire sawing technology and better understand the material removal phenomena involved in the sawing ofΦ200 mm silicon ingot,the effects of the main cutting parameters(wire speed and table speed)on the surface integrity of sawn crystalline silicon workpieces were investigated in this paper.This paper reported an experimental study on the characteristic of the brittleductile transition of the sawn surface and discussed the results considering the surface mor

关 键 词：硅片切割 去除机制 表面粗糙度 表面损伤 

分 类 号：TN304.1[电子电信—物理电子学]