SOI-MOS器件的自热效应仿真及产热机理研究  

Simulations of self-heating effects and the heat generation mechanisms in SOI-MOS devices

作　　者：唐正来 曹炳阳[1] TANG Zhenglai;CAO Bingyang(Department of Engineering Mechanics,Tsinghua University,Beijing 100084)

机构地区：[1]清华大学工程力学系,北京100084

出　　处：《微电子学与计算机》2023年第11期94-103,共10页Microelectronics & Computer

基　　金：国家自然科学基金项目(51825601,U20A20301,52250273)。

摘　　要：随着微电子器件日益微型化和高速化,自热效应已逐渐成为限制其性能提升的重要因素,深入理解纳米尺度器件产热机理对电子器件的设计和优化具有重要意义.针对绝缘体上硅金属-氧化物半导体场效应晶体管(SOIMOS)进行了电热仿真,基于漂移扩散模型详细计算和分析了焦耳热、重组热和帕尔贴-汤姆逊热的生成及其影响.计算结果显示,焦耳热在器件内是主要的功耗来源,主要分布在栅极下方的导电沟道处,最大值出现在漏极端.与此相比,重组热的量级极小,主要分布在沟道区和源漏结区,其对温度场和器件性能的影响较弱.帕尔贴-汤姆逊热与焦耳热的产热量级相当,会影响器件温度分布.然而,由于其在栅极下方存在独特的冷热源交替分布,加热效应和制冷效应得到了抵消,同时引起的温度变化集中在源漏电极下方,导致其对器件性能基本不产生影响.此外,帕尔贴-汤姆逊热的影响与边界条件有关,在基底散热时,忽略帕尔贴-汤姆逊热会导致温度场预测发生较大偏差,这对于评估器件的寿命和可靠性非常关键.As microelectronic devices continue to miniaturize and accelerate,self-heating effects have progressively become a crucial factor limiting their performance enhancement.A deep understanding of the heat generation mechanisms at the nanoscale is of great significance for the design and optimization of electronic devices.In this study,an electrothermal simulation was conducted for the Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor(SOIMOS),where the drift-diffusion model was used to thoroughly compute and analyze the generation and effects of Joule heat,recombination heat,and Peltier-Thomson heat.The results revealed that Joule heat is the primary source of power consumption within the device,mainly located beneath the gate in the conductive channel,with its peak value at the drain end.In comparison,the magnitude of recombination heat is minimal,primarily distributed in the channel region and sourcedrain junction,exerting a weak impact on the temperature field and device performance.The Peltier-Thomson heat,having a comparable heat generation level to Joule heat,affects the device's temperature distribution.However,due to its unique alternating cold and heat source distribution beneath the gate,its heating and cooling effects offset each other,and the temperature changes it induces are concentrated below the source and drain electrodes,resulting in negligible effects on device performance.Furthermore,the impact of Peltier-Thomson heat is related to boundary conditions;when considering heat dissipation from the base,overlooking the Peltier-Thomson heat can lead to significant deviations in temperature field predictions,which is vital for evaluating the lifespan and reliability of the device.

关 键 词：SOI-MOS 自热效应 电热仿真 产热机理 

分 类 号：TN386[电子电信—物理电子学]