电感耦合等离子体发射光谱法测定选冶物料中二氧化硅量  

Determination of silicon dioxide in metallurgical materials by Inductivelycoupled plasma emission spectrometry

作　　者：罗文 Luo Wen(Shanghang County Institute of Quality and metrology,Shanghang,Fujian 364200,China)

机构地区：[1]上杭县质量计量检测所,福建上杭364200

出　　处：《福建分析测试》2023年第5期24-27,36,共5页Fujian Analysis & Testing

摘　　要：本方法试样经碱熔后进行酸化。在稀盐酸介质中,采用内标法和基体匹配消除干扰,使用电感耦合等离子体发射光谱仪,于元素所对应的波长处测量其质量浓度。该方法测定范围:0.50%~95%,适用于大批量的分析,操作简单,流程短。The sample is acidified after alkali melting.In dilute hydrochloric acid medium,Using internal standard method and matrix matching to eliminate interference,Using a Inductively coupled plasma emission spectrometer,The mass concen⁃tration of the element is measured at the corresponding wavelength.The range of determination is 0.50%~95%,Suitable for large-scale analysis,simple operation,short flow.

关 键 词：选矿物料 二氧化硅 电感耦合等离子体光谱法 

分 类 号：O657.3[理学—分析化学]