碲化铋红外透明导电薄膜的制备与光电性能(特邀)  

Preparation and Photoelectric Properties of Bi2Te3 Infrared Transparent Conductive Films(Invited)

作　　者：吴易豪 肖雪华 毕然 李雅丹 郑传涛 王一丁 WU Yihao;XIAO Xuehua;BI Ran;LI Yadan;ZHENG Chuantao;WANG Yiding(State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China;Jilin Provincial Engineering Research Center of Infrared Gas Sensing Technique,Changchun 130012,China)

机构地区：[1]吉林大学电子科学与工程学院集成光电子学国家重点联合实验室吉林大学实验区,长春130012 [2]吉林省红外气体传感技术工程研究中心,长春130012

出　　处：《光子学报》2023年第10期150-158,共9页Acta Photonica Sinica

基　　金：国家自然科学基金(Nos.62175087,62105118,62235016,61960206004);吉林省科技发展计划(Nos.20200401059GX,20230201054GX);吉林省教育厅科技发展规划项目(No.JJKH20211088KJ);长春市重点研发项目(No.21ZGN24)。

摘　　要：采用射频磁控溅射法在石英衬底和硒化锌衬底上制备了碲化铋薄膜,分别研究了薄膜厚度、退火温度对薄膜微观结构和光电性能的影响。利用X射线衍射仪、X射线光电子能谱仪和冷场发射扫描电子显微镜,分析了薄膜结构、成分和形貌。结果表明,退火有利于薄膜的结晶,且不改变晶体的择优取向。傅里叶变换红外光谱测试结果表明,在石英衬底和硒化锌衬底上沉积的薄膜,光学透过率随着薄膜厚度和退火温度的增加而减小,在硒化锌衬底上沉积的薄膜透过波段比石英长,且光学透过率更加稳定。霍尔效应测试结果表明,随着薄膜厚度和退火温度的增加,薄膜的电阻率逐渐减小,最小为1.448×10-3Ω·cm,迁移率为27.400 cm2·V-1·s-1,载流子浓度为1.573×1020cm-3。在石英衬底上沉积的15 nm厚的Bi2Te3薄膜,在1~5μm波段的透过率达到80%,退火200℃后透过率达到60%,电阻率为5.663×10-3Ω·cm。在硒化锌衬底上沉积相同厚度的薄膜,在2.5~20μm波段的透过率达到65%,200℃退火后透过率达到60%,薄膜电阻率为9.919×10-3Ω·cm。制备的Bi2Te3薄膜具有优良的光电特性,是红外透明导电薄膜领域理想的候选材料之一,在红外光电子学芯片制备领域有较好的应用前景。Infrared transparent conductive thin film is a special material that can both transmit light and conduct electricity.It is widely used in solar cells,radiative cooling,infrared detector anti-interference coating,transparent electrode,sensing technology,photoelectric devices and other fields.Bismuth telluride is a semiconductor material with a molecular formula of Bi2Te3,which has good conductivity and a band gap width of 0.145 eV at room temperature.Based on the excellent optoelectronic properties of Bi2Te3 materials and their significant research value in the field of broadband photodetectors,Bi2Te3 is one of the ideal candidate materials in the field of infrared transparent conductive films.The preparation methods of Bi2Te3 films usually include pulsed laser deposition,magnetron sputtering,physical vapor transport,vacuum evaporation,molecular-beam epitaxy,electron beam deposition,etc.In this paper,Bi2Te3 thin films are deposited on fused silicas substrates and zinc selenide substrate by magnetron sputtering.The structure,composition and morphology of the prepared Bi2Te3 thin films are analyzed by diffractometer,X-ray photoelectron spectrometer and cold field emission scanning electron microscope.The optical transmittance,conductivity,carrier mobility and other optoelectronic properties of the films are studied.The test results show that annealing is conducive to the crystallization of the films,and does not change the preferred orientation of the crystals.The crystallinity is excellent when the annealing temperature is 350℃,and the crystallinity will become better with the increase of the film thickness.The Fourier transform infrared spectrum test results show that the optical transmittance of Bi2Te3 films deposited on fused silicas and zinc selenide substrates decreases with the increase of film thickness and annealing temperature.The optical transmittance of the films deposited on zinc selenide substrates is longer than that of fused silicas,and the optical transmittance is more stable.The hall effect test

关 键 词：透明导电薄膜 中红外波段 射频磁控溅射 BI2TE3 光电性能 

分 类 号：TN21[电子电信—物理电子学]