基于AZ5214光致保护层的As2S3硫系脊型波导制备  

Preparation of As2S3 Chalcogenide Ridge Waveguide Based on AZ5214 Photoprotective Layer

作　　者：尚磊 邹林儿 杨熙飞 李乐[1] 沈云[1] SHANG Lei;ZOU Liner;YANG Xifei;LI Le;SHEN Yun(School of Physics and Materials Science,Nanchang University,Nanchang 330031,China)

机构地区：[1]南昌大学物理与材料学院,南昌330031

出　　处：《光子学报》2023年第10期220-227,共8页Acta Photonica Sinica

基　　金：国家自然科学基金(No.62165008);江西省自然科学基金(No.20212ACB201007)。

摘　　要：实验研究发现AZ5214光刻胶在一定曝光剂量下显影后会留存一定厚度的底膜,该底膜可以在干法刻蚀过程中避免As-S薄膜与碱性显影液直接接触,减轻薄膜表面损伤,起到保护作用。基于此,采用该底膜作为保护层制备As2S3脊型波导,研究结果表明,在AZ5214光刻胶匀胶厚度为2.1μm、紫外曝光剂量为200 mJ/cm2、显影时间为45 s的条件下会留存约为220 nm厚的光致保护层,该条件下保护层均匀性较好,且在刻蚀阶段可以完全去除。实验表明利用此保护层制备的As2S3脊型波导具有良好的形貌特征,波导脊宽约为3μm、脊高约为800 nm的As2S3脊型波导的传输损耗约为0.74 dB/cm@1 550 nm。With the development of chalcogenide photonic devices,there is an increasing demand for highquality chalcogenide optical waveguides which are widely used in infrared sensors,all-optical signal processing and other fields,therefore,the preparation of high-quality chalcogenide optical waveguides has become one of the hot fields of chalcogenide photonics.In the preparation of chalcogenide optical waveguide,the preparation methods include ion implantation,wet etching,dry etching,stripping and so on.Among these methods,the dry etching for preparing chalcogenide waveguide is used widely.Especially in recent years,researchers have successfully prepared As2S3,As2Se3,Ge-Ga-Se and other chalcogenide optical waveguides by dry etching.However,due to attack of the chalcogenide films(especially As2S3 film)by the alkaline developer which is used in the dry etching,the preparating process of As2S3 ridge waveguide needs very precise design and the quality of the chalcogenide waveguide can be affected.To improve this situation,some researchers proposed adding protective layers to prevent the attack of the developer on the As2S3 film.Previous researchers have tried to introduce Bottom Anti-reflection Coating,Polypropyl Methyl Acrylate and SU-8 as protective layers.However,the addition of such protective layers will further make the preparation process of waveguides cumbersome.In this paper,it is found that AZ5214 photoresist will retain the residual film with a certain thickness which is attached to As2S3 film under a certain exposure dose and appropriate development time.Based on this,this paper proposes to use this residual film as a protective layer to prepare the As2S3 ridge waveguide by dry etching.This protective layer can prevent the attack of the developer on the As2S3 film,and also be removed by etching,which will simplify the pattern transfer process compared with other protective layers.In this paper,the as-deposited As2S3 films with a film thickness of about 1μm were deposited by vacuum resistance evaporation onto sili

关 键 词：集成光学 硫系玻璃 脊型波导 AZ5214光刻胶 光致保护层 

分 类 号：TN252[电子电信—物理电子学]